Adam Babiński

updated December 18th  2016


105. M.R.Molas, A.Wójs, A.A.L.Nicolet, A.Babiński, and M.Potemski

Energy spectrum of confined positively charged excitons in single quantum dots  

Physical Review B 94, 235416 (2016).

Copyright (2016) by the American Physical Society.


104. M.R Molas, A.A.L.Nicolet, B.Piętka, A Babiński, and M Potemski

The excited spin-triplet state of a charged exciton in quantum dots  

J. Phys.: Condens. Matter 28, 365301 (2016).


103. M.Grzeszczyk, K.Gołasa, M.Zinkiewicz, K.Nogajewski, M.R.Molas, M.Potemski, A.Wysmołek, and A.Babiński

Raman scattering of few-layers MoTe2  

2D Materials 3, 025010 (2016).


102. M. R. Molas, A. A. Nicolet, A. Babiński, and M. Potemski

Quadexciton cascade and fine-structure splitting of the triexciton in a single quantum dot  

EPL 113, 17004 (2016).


101. K. Gołasa, M.Grzeszczyk, J.Binder, R. Bożek, A. Wysmołek, and A. Babiński

The disorder-induced Raman scattering in Au/MoS2 heterostructures  

AIP Advances 5, 077120 (2015).


100. M. Zieliński, K. Gołasa, M.R.Molas, M.Goryca, T. Kazimierczuk, T. Smoleński, A. Golnik, P. Kossacki, A. A. L. Nicolet, M. Potemski, Z. R. Wasilewski,and A. Babiński

Excitonic complexes in natural InAs/GaAs quantum dots  

Physical Review B 91, 085303 (2015).

Copyright (2015) by the American Physical Society.


99. K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński

Resonant Raman scattering in MoS2 - From bulk to monolayer  

Solid State Communications 197, 53 (2014).


98. The following article appeared in Applied Physics Letters 104, 092106 (2014)

and may be found at (AIP Webpage)

K. Gołasa, M. Grzeszczyk, P. Leszczyński, C. Faugeras, A. A. L. Nicolet, A. Wysmołek, M. Potemski, and A. Babiński

Multiphonon resonant Raman scattering in MoS2
Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

97. K. Gołasa, M. Grzeszczyk, K.P.Korona, R. Bożek, J.Binder, J.Szczytko, A. Wysmołek, and A. Babiński

Optical Properties of Molybdenum Disulfide (MoS2)  

Acta Physica Polonica A 124,  849 (2013).


96. M.R.Molas, A.A.Nicolet, M.Potemski, and A.Babiński

Intershell Exchange Interaction in Charged GaAlAs Quantum Dots,  

Acta Physica Polonica A 124,  785 (2013).


95. K. Gołasa, M.Molas, M.Goryca, T.Kazimierczuk, T.Smoleński, M.Koperski, A.Golnik, P.Kossacki, M.Potemski, Z.R.Wasilewski, and A.Babinski

Properties of Excitons in Quantum Dots with a Weak Confinement,  

Acta Physica Polonica A 124,  781 (2013).


94. A.Babinski, M.Korkusinski, P.Hawrylak, M.Potemski, and Z.R.Wasilewski,

Renormalization of effective mass in self-assembled quantum dots due to electron-electron interactions,  

J.Phys.: Conf. Ser. 456 , 012002 (2013).


93. A.Babiński, M. Potemski, P.C.M. Christianen,

Optical spectroscopy on semiconductor quantum dots in high magnetic fields,

Comptes rendus - Physique 14 , 121 (2013).


92. J.-G. Rousset, T. Słupinski, T. Jakubczyk, J. Kobak, P. Stawicki, K. Gołasa, A. Babinski, M. Nawrocki and W. Pacuski
 

MBE Growth and Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots ,

Acta Physica Polonica A 122,  984 (2012).


91.
M. Molas, K. Gołasa, B. Piętka, M. Potemski and A. Babiński 

Fine Structure of Neutral Excitons in Single GaAlAs Quantum Dots ,

Acta Physica Polonica A 122, 988 (2012).


90.
M. Molas, K. Gołasa, M. Furman, J. Lapointe, Z.R. Wasilewski, M. Potemski and A. Babiński,

The Fine Structure of a Triexciton in Single InAs/GaAs Quantum Dots,

Acta Physica Polonica A 122, 991 (2012).


89. The following article appeared in
Journal of Applied Physics 111, 033510 (2012) and may be found at (AIP Webpage)

M. Molas, K. Gołasa, K. Kuldova, J. Borysiuk, A. Babiński,  J. Lapointe, and Z. R. Wasilewski,

The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots

Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

88. T. Kazimierczuk,A. Golnik, P. Kossacki, J. A. Gaj, Z.R.Wasilewski, and A. Babinski;

Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer,

Physical Review B 84, 115325 (2011)

Copyright (2011) by the American Physical Society.

87. M. Molas, K.Kuldova, J. Borysiuk, Z.R.Wasilewski, and A. Babinski;
Quantum Confinement in InAs/GaAs Systems with Self-Assembled Quantum Dots Grown Using In-Flush Technique,
Acta Physica Polonica A 119, 624 (2011).

86. Karla Kuldova, M. Molas, Jolanta Borysiuk, A. Babinski, Z Vyborny, J. Pangrac, and J. Oswald;
Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots,

J.Phys.: Conf.Ser. 245, 012079 (2010).

85. M. Yakushev, R. Martin, A. Babinski, and A.Mudryi,
Effects of magnetic fields on free excitons in CuInSe2,
phys. stat. sol.(c) 6, 1086-1088 (2009).


84. S. M. Vachon, S. Raymond, A. Babinski,J.Lapointe, Z.Wasilewski, and M. Potemski,

Energy shell structure of a single InAs/GaAs quantum dot with a spin-orbit interaction  
Phys. Rev. B 79 , 165427 (2009)

Copyright (2009) by the American Physical Society.

83. A. Babinski, A. Golnik, J.Borysiuk, S. Kret, P. Kossacki, J. A. Gaj, S. Raymond, M. Potemski, Z. R. Wasilewski,

Three-dimensional localization of excitons in the InAs/GaAs wetting layer - magnetospectroscopic study,
  phys. stat. sol. (b) 246, 850 (2009).

82. S.Awirothananon, S. Raymond, S. Studenikin, M. Vachon, W. Render, A. Sachrajda, X. Wu, A. Babinski, M. Potemski, S. Fafard, S. J. Cheng, M. Korkusinski, and P. Hawrylak,
Single-exciton energy shell structure in InAs/GaAs quantum dots
Phys. Rev. B 78 , 235313 (2008)

Copyright (2008) by the American Physical Society.

81. A. Babinski, M. Czyż, J. Borysiuk, S.Kret, A. Golnik, S. Raymond, J.Lapointe, and Z.R.Wasilewski ,
Neutral and charged excitons localized in the InAs/GaAs wetting layer
Acta Physica Polonica A, 114, 1055 (2008).

80. The following article appeared in Appl. Phys. Lett. 92, 171104 (2008)

and may be found at (AIP Webpage)

A.Babiński, J.Borysiuk, S.Kret, M.Czyz, A.Golnik, S.Raymond, and Z.R.Wasilewski, 

Natural quantum dots in the InAs/GaAs wetting layer

 Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

79. A. Babinski, M. Potemski, S. Raymond and Z. Wasilewski,
Charged and neutral excitons in natural quantum dots in the InAs/GaAs wetting layer ,
Physica E, 40, 2078 (2008).

78. M. Korkusinski, P. Hawrylak, A. Babinski,M. Potemski, S. Raymond and Z. Wasilewski,
Optical readoutof charge and spin in a self-assembled quantum dot in a strong magnetic field 

Europhysics Letters 79, 47005 (2007).

77. The following article appeared in  PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors AIP Conference Proceedings 893, 905 (2007)

and may be found at (AIP Webpage):

A.   Babinski, M. Potemski, S. Raymond, J. Lapointe, Z. R. Wasilewski, and J. M. Baranowski,
Excitonic Fock-Darwin Spectrum of a Single Quantum Dot.

Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

76. Weidong Sheng and A. Babiński,  

Zero g factors and nonzero orbital momenta in self-assembled quantum dots , Phys. Rev. B 75 , 033316 (2007)

Copyright (2007) by the American Physical Society.

75. J.Siwiec-Matuszyk, M. Baj, A. Babiński, J. Kasprzak,  
Influence of Intersubband Scattering on the Magnetic Field Dependence of the Conductivity Tensor,
Acta Physica Polonica A 110 337 (2006).

74. A. Babiński, M. Potemski, S.Raymond, J.Lapointe, and Z.Wasilewski,

Fock-Darwin spectrum of a single InAs/GaAs quantum dot
, phys. stat. sol. (c) 3 3748–3751 (2006).

73. A. Babiński, M. Potemski, S.Raymond, J.Lapointe, and Z.Wasilewski,
"Emission from a highly excited single InAs-GaAs quantum dot in magnetic fields: An excitonic Fock-Darwin diagram" Phys. Rev. B 74 , 155301 (2006)

Copyright (2006) by the American Physical Society.

72. K. Korona, A. Babiński, S.Raymond, and Z.Wasilewski,
Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System,
Acta Physica Polonica A 110 , 219 (2006).

71. A. Babiński,
Optical spectroscopy of Quantum Dots in High Magnetic Fields,
  Acta Physica Polonica A 110 , 275 (2006).

70. A. Babiński, M. Potemski, S.Raymond, M. Korkusinski, W.Sheng, P. Hawrylak, and Z.Wasilewski,  
Optical spectroscopy of a single InAs/GaAs quantum dot in high magnetic fields,
Physica E 34 , 288 (2006).


69. A.Babiński, G. Ortner, S.Raymond, M. Potemski, M. Bayer, W.Sheng, P. Hawrylak, Z.Wasilewski, S.Fafard, and A. Forchel,

" Ground-state emission from a single InAs/GaAs quantum dot structure in ultrahigh magnetic fields"
Phys. Rev. B 74 , 075310 (2006)

Copyright (2006) by the American Physical Society.

68. The following article appeared in Appl. Phys. Lett. 88, 051909 (2006)

and may be found at (AIP Webpage)

A. Babiński, M.Potemski, and H.Shtrikman
Quantum oscillations of the luminescence from a modulation-doped GaAs/InGaAs/GaAlAs quantum well  

Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

67. The following article appeared in  PHYSICS OF SEMICONDUCTORS: Proceedings of the 27th Int. Conf. on the Physics of Semiconductors ed. by José Menéndez and Chris G. Van de Walle, AIP Conference Proceedings 772, 685 (2005) and may be found at (AIP Webpage)

M. Korkusinski, W. Sheng, P. Hawrylak, Z. Wasilewski, G. Ortner, M. Bayer, A. Babinski, and M. Potemski,  

Electron and Hole States in Vertically Coupled Self-Assembled InGaAs Quantum Dots.

Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

66. B. Chwalisz, A. Wysmołek, R. Stępniewski, A. Babiński, M Potemski, V Thierry-Mieg,
"Magneto-luminescence of a single lateral island formed in a type - II GaAs / AlAs QW" International Journal of Modern Physics, 18, 3807 (2004).

65. G. Ortner, I. Yugova, G. Baldassarri Höger von Högersthal, A. Larionov, H. Kurtze, D. R. Yakovlev, M. Bayer, S. Fafard, Z. Wasilewski, and P. Hawrylak, Y. B. Lyanda-Geller,T. L. Reinecke, A. Babiński, M. Potemski, V. B. Timofeev and A. Forchel,

 Fine structure in the excitonic emission of InAs/GaAs quantum dot molecules ,

Phys. Rev. B 71 , 125335 (2005)

Copyright (2005) by the American Physical Society.

64. A. Babiński, S. Awirothananon, J. Lapointe, Z.Wasilewski, S. Raymond, and M. Potemski, Single-Dot Spectroscopy in High Magnetic Fields, Physica E, 26, 190 (2005).

63. A. Wysmołek, B. Chwalisz, M. Potemski, R.Stępniewski, A. Babiński, S. Raymond, V Thierry-Mieg,
Emission from Mesoscopic-Size Islands Formed in GaAs / AlAs Double Layer Structure, Acta Phys. Pol. A, 106, 367 (2004).

62. A. Babiński, S. Raymond, Z.Wasilewski, J.Lapointe, and M. Potemski,  Localization of Excitons in the Wetting layer Accompanying Self-Assembled InAs/GaAs Quantum Dots, Acta Phys. Pol. A, 105, 547 (2004).

61. S. Awirothananon, W.D.Sheng, A. Babiński, S. Studenikin, S. Raymond, A. Sachrajda, M. Potemski, S. Fafard, G. Ortner, and M. Bayer,
"Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence ", Jap. Journal of Appl. Phys. 43, No. 4B, 2088 (2004).

60. D.Smirnov, S.Raymond, S.Studenikin, A.Babiński , J.Leotin, P.Frings, M.Potemski, and A.Sachrajda,
Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73T, Physica B, 346-347, 432 (2004).

59. S. Raymond, S. Studenikin, A. Sachrajda, Z. Wasilewski, S. J. Cheng, W. Sheng, P. Hawrylak, A. Babiński, M. Potemski, G. Ortner, and M. Bayer,
"Excitonic Energy Shell Structure of Self-Assembled InGaAs/GaAs Quantum Dots ", Physical Review Letters 92,187402 (2004)

Copyright (2004) by the American Physical Society.

58. A. Babiński, S. Awirothananon, S. Raymond, S. Studenikin, P. Hawrylak, S. -J. Cheng, W. Sheng, Z. Wasilewski, M. Potemski , and A. Sachrajda,
Photoluminescence excitation spectroscopy of InAs/GaAs quantum dots in high magnetic field, Physica E, 22, 603 (2004).

57. J-N Isaia, A.Babiński ,L-A de Vaulchier, M.Potemski, Y.Guldner,and J-M Gerard,  Enhanced exciton-LO phonon coupling in doped quantum dots, Physica E, 21, 400 (2004).

56. S.J.Cheng, W.Sheng, P.Hawrylak, S.Raymond, S.Studenikin, A.Sachrajda, Z.Wasilewski, A.Babiński , M.Potemski, G.Ortner, and M.Bayer,
Electron-hole complexes in self-assembled quantum dots in strong magnetic field, Physica E, 21, 211 (2004).

55. A.Babiński , M.Potemski, H.Shtrikman,  "Luminescence of a dense two-dimensinal electron gas involving free-and bound holes in the GaAs/InGaAs/AlGaAs quantum wells",
Physics of Semiconductors 2002, Proceedings of the 26th ICPS, Edinburgh 2002, ed. A.R.Long and J.H.Davies, Inst. of Physics Conference Series 171, Bristol and Philadelphia 2002, H61.

54. A. Drabińska, K. P. Korona, R. Bożek, A. Babiński, J. M. Baranowski, W. Pacuski, R. Stępniewski, and T. Tomaszewicz,
"Determination of Si d-doping concentration in GaN by Electroreflectance", phys. stat. sol. (b) 234, 868 (2002).

53. Self-Assembled Quantum Dots in Electric Field , in " Quantum Dots and Nanowires" American Scientific Publishers, 2002.

52. The following article appeared in Journal of Applied Physics 92, 163 (2002)  and may be found at (AIP Webpage)

Aneta Drabińska, A. Babiński, T. Tomaszewicz, R. Bożek, and J. M. Baranowski
" Optical determination of the dopant concentration in the d-doping layer"
Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

51. A. Babiński , M.Potemski, and H.Shtrikman,

Free-to-bound and interband recombination in the photoluminescence of a dense two-dimensional electron gas , Phys. Rev. B 65 , 233307 (2002)  Copyright (2002) by the American Physical Society

50. A. Babiński and J.Jasiński , Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots, Thin Solid Films 412/1-2 84 (2002).

49. L.V.Dao, M.Gal, A.Babiński, and J.Jagadish;  " Ultrafast time-resolved photoluminescence measurements on InGaAs/GaAs Quantum Dots "
COMMAD 2000. Conference Proc. Conference on Optoelectronic and Microelectronic Materials and Devices (Cat. No.00EX466), ed. L.Broekman, B.Usher, and J. Riley, IEEE, Piscataway, NJ, USA; 2000 p. 443

48. E.Ilczuk, K.P.Korona, A. Babiński, and J.Kuhl, "The Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots" , Acta Phys.Pol. A 100, 379 (2001).

47. The following article appeared in Appl. Phys. Lett. 79, 2576 (2001) and may be found at (AIP Webpage)

 A.Babiński, J.Jasiński, R. Bożek, A. Szepielow, and J.M. Baranowski;
" Rapid thermal annealing of InAs/GaAs quantum dots under GaAs proximity-cap "
Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

46. K. P.Korona, A.Babiński, J.Kuhl, J.M.Baranowski, and R.Leon;  "Step-like Photoluminescence Dynamics in Field-Effect Structures Containing Quantum Dots" phys. stat. sol. (b) 227, 605 (2001).

45. Z. Dziuba, M. Górska, J. Antoszewski, A.Babiński, P. Kozodoy, S. Keller, B. Keller , S. P. DenBaars, and U. K. Mishra,  Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure, Applied Physics A 72, 691 (2001).

44. A.Babiński, R. Kulawiński, T. Tomaszewicz, J.M. Baranowski; " Optical determination of delta -doping concentration in semiconductor structures "
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386). IEEE, Piscataway, NJ, USA; 2000 p. 183

43. The following article appeared in Appl. Phys. Lett. 78, 3992 (2001)

and may be found at (AIP Webpage) 

A. Babiński, P. Witczak, A. Twardowski, and J. M. Baranowski;
"Electroluminescence from a forward-biased Schottky barrier diode on modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure "
Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

42. A.Babiński, J.M. Baranowski, R.Leon, and C. Jagadish, "Field-Effect Structure with Double layer of InGaAs/GaAs Quantum Dots - a new concept of Electron Tunneling Device "
Semiconductor Quantum Dots II - 2000, Mater. Res. Soc. Proc. 642, J.4.6.1; Warrendale, PA, USA.

41. J.Jasiński, A.Babiński, R. Bożek, A. Szepielow, and J.M. Baranowski, "Effects of Annealing on Self-Assembled InAs Quantum Dots and Wetting Layer in GaAs Matrix;
Semiconductor Quantum Dots II - 2000, Mater. Res. Soc. Proc. 642, J3.39.1; Warrendale, PA, USA.

40. J.Jasiński, A.Babiński, M.Czeczott, and R.Bożek, "InGaAs/GaAs quantum dot interdiffusion induced by cap layer overgrowth"
Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films ed. Millunchick JM; Barabasi AL; Modine NA; Jones ED., Mater. Res. Soc. Proc. 618, pp.179-84.

39. A.Babiński, P.Witczak, S.Lavorik, and A.Twardowski, "Low-temperature light emission in a forward-biased Schottky diode with a n-doped channel"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046). IEEE, Piscataway, NJ, USA; 2000; pp.276-9

38. J.Jasiński, A.Babiński, R.Bożek, and J.M.Baranowski, "Post-growth thermal treatment of InAs/GaAs quantum dots"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046). IEEE, Piscataway, NJ, USA; 2000; pp. 272-5

37. A.Babiński, K.P.Korona, and J.M.Baranowski, "The effect of electric field on the self-organized quantum dots"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046). IEEE, Piscataway, NJ, USA; 2000; pp.232-5

36. The following article appeared in Appl. Phys. Lett. 77, 999 (2000)

and may be found at (AIP Webpage)

 A.Babiński, J.Siwiec-Matuszyk, J.M.Baranowski, G.Li, and C.Jagadish,
"Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs quantum well grown by metalorganic vapor phase epitaxy"
Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

35. A.Babiński, "Photoluminescence from InGaAs/GaAs Quantum dots in high electric field"
NATO ANSI Conf. Ser. Optical properties of Semiconductor Nanostructures ed by M.L.Sadowski, M.Potemski, and M.Grynberg, Kluver Academic Publishers, p. 395

34. T.Tomaszewicz, A.Babiński , D.Suska, J.M.Baranowski,  "Electroreflectance Bias-Wavelength Mapping of the GaAs/InGaAs/AlGaAs structure" , Inst. Phys. Conf. Ser. No 166, 143 (2000)

33. A.Babiński and J.M.Baranowski, "The effect of electron occupation on the photoluminescence from the self-organized InGaAs/GaAs quantum dots"
physica status solidi a 187, 313 (2000).

32. A.Babiński, T.Tomaszewicz, A.Wysmołek, J.M.Baranowski, C.Lobo, R.Leon, and C.Jagadish, "Optical properties of self-organized InGaAs/GaAs quantum dots in field effect structures"
Microcrystalline and Nanocrystalline Semiconductors - 1998. Mater. Res. Soc. Proc. 536, pp.269-74. Warrendale, PA, USA.

31. The following article appeared in Appl. Phys. Lett. 75, 2088 (1999)

and may be found at (AIP Webpage) 

T. Tomaszewicz, A.Babiński , D.Suska, J.M.Baranowski, and A.Tomaszewicz,
Electroreflectance Bias-Wavelength Mapping of the modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs structure
Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

30. The following article appeared in Appl. Phys. Lett. 73, 2811 (1998)

and may be found at (AIP Webpage)  

A.Babiński,A.Wysmołek, T.Tomaszewicz, J.M.Baranowski, R.Leon, C.Lobo, and C.Jagadish,
"Electrically modulated photoluminescence in self-organized InGaAs/GaAs quantum dots"
Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

29. G.Li, M.B.Johnston, A.Babiński , S.Yuan, M.Gal, S.J.Chua, and C.Jagadish, "Si and C d-doping for device applications" J.Cryst. Growth 195, 54 (98)

28. A.Babiński, G.Li, and C.Jagadish, "Magnetotransport measurements on modulation Si d-doped pseudomorphic InGaAs/GaAs quantum wells" Physica B 246-247, 289 (1998)

27. The following article appeared in Appl. Phys. Lett. 72, 2322 (1998)

 and may be found at (AIP Webpage) 

G. Li, A.Babiński, S. J. Chua and C. Jagadish,
Electron Transfer Efficiency in Si d-Modulation Doped Pseudomorphic GaAs/InGaAs/AlGaAs QWs
Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

26. A.Babiński, G.Li, and C.Jagadish, "The effect of band bending on the transport properties of modulation doped pseudomorphic InGaAs/GaAs quantum wells"
Proceedings of the 4th Vaccum Society of Australia Congress, Canberra 1997

25. The following article appeared in Appl. Phys. Lett. 71, 1664 (1997)

and may be found at (AIP Webpage)
A.Babiński,G.Li, and C.Jagadish,
The persistent photoconductivity effect in modulation Si d-doped pseudomorphic InGaAs/GaAs quantum well structure
Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

24.A.Babiński, R.Leon, and C.Jagadish, "Capacitance measurements on self-organised MOCVD grown InGaAs quantum dots", Proc. of 1996 COMMAD-96 Conference, ed. C. Jagadish, Canberra 1996, p.183

23. The following article appeared in Appl. Phys. Lett. 70, 3582 (1997)

and may be found at (AIP Webpage) 

G.Li, A.Babiński, and C.Jagadish,
Subband electron densities of Si delta-doped pseudomorphic InGaAs/GaAs heterostructures
Copyright(1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

22. R.Bożek, A.Babiński, J.M.Baranowski, R.Stępniewski, Z. Klusek, W. Olejniczak, K. Starowieyski, and J.Wróbel, "GaSb dots grown on GaAs surface by MOCVD", Acta Phys. Pol. A 88, 974 (1995).

21. A.Babiński and J.M.Baranowski,  "Splitting of the acceptor level of the metastable EL2 under uniaxial stress", Proc. of 22nd ICPS, Vancouver 1994, ed. D.J.Lockwood, Singapore 1995, 2287.

20. A.Babiński, A.Wysmołek, and J.M.Baranowski, 

Splitting of the metastable EL2 acceptor state, Phys. Rev. B 50, 10656 (1994)

Copyright (1994) by the American Physical Society

19. T.Słupiński, A.Wysmołek, M.Leszczyński, A.Babiński, A.Kurpiewski, A.Barcz, and R.Stępniewski,
"Single crystals of GaAsP grown by the Czochralski method,
"Semi-Insulating III-V Materials Conference, Warszawa 1994", ed. M.Godlewski, 39.

18. A.Babiński and A.Wysmołek, "Orientational degeneracy of the acceptor level of the metastable EL2", "Semi-Insulating III-V Materials Conference, Warszawa 1994", ed. M.Godlewski, 221.

17. A.Babiński and A.Wysmołek, Orientation of the metastable EL2 under uniaxial stress, Acta Phys. Pol. A 87, 137 (1995).

16. A.Babiński, "Pokaz efektu Halla na sali wykladowej", Postępy Fizyki, 45, (1994), 169 (in Polish)

15. A.Babiński, A.Wysmołek, and M.Baj, "Symmetry of the acceptor-like state of the EL2 defect in the metastable configuration", Mat.Sc.Forum, vol. 143-147, 1051 (1994)

14. P.Trautman, J.M.Baranowski, and A.Babiński, "Ordering of the EL2 defect in the metastable state", Mat.Sc.Forum, vol. 143-147, 1007 (1994)

13. A.Babiński, A.Wysmołek, and T.Słupiński,  "DLTS measurements of an acceptor-like state of metastable EL2 in GaAs and GaAsP", Acta Phys. Pol., A 84, 673 (1993)

12. A. Wysmołek, R. Bozek, A. Babiński, and A. M. Hennel, Hydrostatic pressure spectroscopy of the vanadium luminescence in GaAs, Acta Physica Polonica A 82, 837 (1992).

11. A. Babiński, J.Przybytek, M.Baj, P.Omling, L.Samuelson, and T.Słupiński,  Hydrostatic-pressure DLTS study of the heteroantisite antimony level in GaAs, Acta Phys.Pol. A 82, 841 (1992).

10. A.Babiński and A.Wysmołek, Electrical properties of an acceptor-like state of metastable EL2 in n-type GaAs under uniaxial stress , Acta Phys.Pol. A 82, 908 (1992).

9. A.Babiński, K.P.Korona, and A.M.Hennel, "Properties of the Fe acceptor level in InP under hydrostatic pressure", "Semi-Insulating III-V Materials Conference, Ixtapa 1992", ed. B.Ford, C.Miner, E.R.Weber, 253.

8. M.Baj, P.Dreszer, and A.Babiński,

Pressure-induced charge state of EL2 defect in its metastable state, Phys. Rev. B 43, 2070 (1991)

Copyright (1991) by the American Physical Society

7. J.Muszalski, A.Babiński, K.P.Korona, E.Kamińska, A.Piotrowska, M.Kamińska, and E.R.Weber, "First TSC and DLTS measurements of low temperature GaAs", Acta Phys.Pol. A 80, 413 (1991).

6. A.Babiński and E.Gołdys, "Passivation of a bulk defect EC-0.22eV in GaAs in phosphoric acid", Acta Phys.Pol. A 79, 277 (1991).

5. A.Babiński, M.Baj, and A.M.Hennel, The pressure dependence of transition metal-related levels in GaAs, Acta Physica Polonica A 79, 323 (1991).

4. M.Baj, P.Dreszer, and A.Babiński,  "Acceptor-like level of the EL2 defect in its metastable configuration", Proc. of 20th ICPS Saloniki 1990, ed. E.M.Anastassakis, J.D.Joannopulos, Singapore 1990, 477.

3. M.Baj, P.Dreszer, and A.Babiński, "Acceptor-like level of the EL2 defect in its metastable configuration", Acta Phys. Pol. A 79, 129 (1991).

2. K.P.Korona, K.Karpińska, A.Babiński, and A.M.Hennel, Deep Level Transient Spectroscopy measurements of p-type InP, Acta Phys. Pol. A 77, 71 (1990).

1. A.Babiński, J.M.Baranowski, and M.Czub, Deep Levels in GaAs prepared by VPE, Acta Physica Polonica A 77, 335 (1990).