Adam Babiński
89. The following article appeared in Journal of Applied Physics 111, 033510 (2012) and may be found at (AIP Webpage)
M. Molas, K. Gołasa, K. Kuldova, J. Borysiuk, A. Babiński, J. Lapointe, and Z.
R. Wasilewski,
88. T. Kazimierczuk,
A. Golnik, P. Kossacki, J. A. Gaj, Z.R.Wasilewski, and A. Babinski;
"Single-photon emission from the natural
quantum dots in the InAs/GaAs wetting layer, Physical Review B 84,
115325 (2011)
Copyright (2011) by the American Physical Society
87. M. Molas, K.
Kuldova, J. Borysiuk, Z.R.Wasilewski, and A. Babinski;
"Quantum Confinement in InAs/GaAs Systems with Self-Assembled Quantum Dots
Grown Using In-Flush Technique, Acta Physica Polonica A 119, 624 (2011)
86. Karla Kuldova,
M. Molas, Jolanta Borysiuk, A. Babinski, Z Vyborny, J. Pangrac, and J.
Oswald;
«Quantum
confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum
dots,
Journal of Physics: Conference Series 245, 012079 (2010)
85. M. Yakushev, R. Martin, A. Babinski, and
A.Mudryi;
"Effects of magnetic fields on free excitons in CuInSe2", phys. stat.
sol. (c) 6 , 1086-1088 (2009)
84. S. M. Vachon, S. Raymond, A. Babinski,J.Lapointe,
Z.Wasilewski, and M. Potemski;
"Energy shell structure of a single
InAs/GaAs quantum dot with a spin-orbit interaction " Phys. Rev. B 79
, 165427 (2009)
Copyright (2009) by the American Physical Society
83. A. Babinski, A. Golnik, J. Borysiuk, S. Kret, P. Kossacki, J. A. Gaj, S. Raymond, M.
Potemski, Z. R. Wasilewski,
“Three-dimensional
localization of excitons in the InAs/GaAs wetting layer - magnetospectroscopic
study”,
phys. stat. sol. (b) 246, 850
(2009)
82. S. Awirothananon, S. Raymond, S. Studenikin,
M. Vachon, W. Render, A. Sachrajda, X. Wu, A. Babinski, M. Potemski, S. Fafard, S. J. Cheng, M. Korkusinski, and P. Hawrylak,
"Single-exciton energy shell structure in
InAs/GaAs quantum dots" Phys. Rev. B 78 , 235313 (2008)
Copyright (2008) by the American Physical Society
81. A. Babinski, M. Czyż, J. Borysiuk, S.
Kret, A. Golnik, S. Raymond, J.Lapointe, and Z.R.Wasilewski
80. The following
article appeared in Appl. Phys. Lett. 92,
171104 (2008) and may be found at (AIP
Webpage)
A. Babiński, J.Borysiuk, S.Kret, M.Czyz, A.Golnik, S.Raymond, and Z.R.Wasilewski, " Natural quantum dots in the InAs/GaAs wetting layer"
Copyright (2008) American
Institute of Physics. This article may be downloaded for personal use only. Any
other use requires prior permission of the author and the American Institute of
Physics.
79. A. Babinski, M. Potemski, S. Raymond and Z. Wasilewski
78. M. Korkusinski, P. Hawrylak, A. Babinski,
M. Potemski, S. Raymond and Z. Wasilewski
"Optical
readout of charge and spin in a self-assembled quantum dot in a strong magnetic
field"
Europhysics Letters 79, 47005 (2007)
77. A. Babinski, M. Potemski, S. Raymond, J. Lapointe, Z. R.
Wasilewski, and J. M. Baranowski,
"Excitonic Fock-Darwin Spectrum of a Single Quantum Dot" in PHYSICS
OF SEMICONDUCTORS: 28th International Conference on the Physics of
Semiconductors AIP Conference Proceedings 893, 905 (2007)
76. Weidong Sheng and A. Babiński,
"Zero g factors and nonzero orbital
momenta in self-assembled quantum dots" Phys. Rev. B 75 ,
033316 (2007)
Copyright (2007) by the American Physical Society.
75. J.Siwiec-Matuszyk, M. Baj, A. Babiński, J. Kasprzak,
74. A. Babiński, M. Potemski, S.Raymond, J.Lapointe, and Z.Wasilewski,
73. A. Babiński, M. Potemski, S.Raymond,
J.Lapointe, and Z.Wasilewski,
" Emission from a highly excited single
InAs-GaAs quantum dot in magnetic fields: An excitonic Fock-Darwin
diagram" Phys. Rev. B 74 , 155301 (2006)
Copyright (2006) by the American Physical Society
72. K. Korona, A. Babiński, S.Raymond, and Z.Wasilewski,
71. A. Babiński,
70. A. Babiński, M. Potemski, S.Raymond, M. Korkusinski, W.Sheng,
P. Hawrylak, and Z.Wasilewski,
69. A. Babiński, G. Ortner, S.Raymond, M. Potemski, M. Bayer, W.Sheng,
P. Hawrylak, Z.Wasilewski, S.Fafard,
and A. Forchel,
" Ground-state emission from a single
InAs/GaAs quantum dot structure in ultrahigh magnetic fields" Phys.
Rev. B 74 , 075310 (2006)
Copyright (2006) by the American Physical Society
68. The following
article appeared in Appl. Phys. Lett.88, 051909 (2006) and may be
found at (AIP
Webpage)
A. Babiński, M.Potemski, and H.Shtrikman
" Quantum oscillations of the luminescence from
a modulation-doped GaAs/InGaAs/GaAlAs quantum well"
Copyright (2006)
American Institute of Physics. This article may be downloaded for personal use
only. Any other use requires prior permission of the author and the American
Institute of Physics.
67. M. Korkusinski, W. Sheng, P. Hawrylak, Z.
Wasilewski, G. Ortner, M. Bayer, A. Babinski,
and M. Potemski,
Electron and Hole States in Vertically Coupled Self-Assembled InGaAs Quantum
Dots" PHYSICS OF SEMICONDUCTORS: Proceedings of the 27th Int. Conf. on the
Physics of Semiconductors ed. by José Menéndez and Chris G. Van de Walle, AIP
Conference Proceedings 772, 685 (2005)
66. B. Chwalisz, A.j
Wysmołek, R. Stępniewski, A. Babiński,
M Potemski, V Thierry-Mieg,
"Magneto-luminescence of a single lateral island formed in a type - II
GaAs / AlAs QW" International Journal of Modern Physics, 18, 3807
(2004)
65. G. Ortner, I. Yugova, G. Baldassarri Höger
von Högersthal, A. Larionov, H. Kurtze, D. R. Yakovlev, M. Bayer, S. Fafard, Z.
Wasilewski, and P. Hawrylak, Y. B. Lyanda-Geller,T. L. Reinecke, A. Babiński,
M. Potemski, V. B. Timofeev and A. Forchel,
"
Fine structure in the excitonic emission of InAs/GaAs quantum dot
molecules" Phys. Rev. B 71 , 125335 (2005)
Copyright (2005) by the American Physical Society
64. A. Babiński, S. Awirothananon, J. Lapointe,
Z.Wasilewski, S. Raymond, and M. Potemski,
63. A. Wysmołek, B. Chwalisz, M. Potemski, R.Stępniewski, A. Babiński, S. Raymond,
V Thierry-Mieg,
62. A. Babiński, S. Raymond, Z.Wasilewski, J.Lapointe,
and M. Potemski,
61. S. Awirothananon, W.D.Sheng,
A. Babiński, S. Studenikin, S. Raymond, A. Sachrajda,
M. Potemski, S. Fafard, G. Ortner, and M. Bayer,
60. D.Smirnov, S.Raymond,
S.Studenikin, A.Babiński
, J.Leotin, P.Frings, M.Potemski,A.Sachrajda,
"Electronic structure of InAs/GaAs self-assembled quantum dots studied by
high-excitation luminescence in magnetic fields up to 73T, ", Physica B, 346-347,
432 (2004)
59. S. Raymond, S. Studenikin, A. Sachrajda, Z. Wasilewski, S. J. Cheng, W. Sheng, P. Hawrylak, Adam Babiński, M. Potemski, G. Ortner, and M. Bayer,
Copyright (2004) by the American Physical Society
58. A. Babiński, S. Awirothananon,
S. Raymond, S. Studenikin, P. Hawrylak, S. -J. Cheng,
W. Sheng, Z. Wasilewski, M. Potemski , and A.
Sachrajda,
"Photoluminescence excitation spectroscopy of InAs/GaAs quantum dots in
high magnetic field", Physica E, 22, 603 (2004)
57. J-N Isaia, A.Babiński
,L-A de Vaulchier, M.Potemski,
Y.Guldner,and J-M Gerard,
56. S.J.Cheng, W.Sheng,
P.Hawrylak, S.Raymond, S.Studenikin, A.Sachrajda, Z.Wasilewski, A.Babiński
, M.Potemski, G.Ortner,
and M.Bayer,
"Electron-hole complexes in self-assembled quantum dots in strong magnetic
field", Physica E, 21, 211 (2004)
55. A.Babiński , M.Potemski, H.Shtrikman,
Physics of Semiconductors 2002, Proceedings of the 26th ICPS, Edinburgh 2002,
ed. A.R.Long and J.H.Davies, Inst. of Physics Conference Series 171, Bristol
and Philadelphia 2002, H61
54. A. Drabińska, K. P. Korona, R. Bożek, A. Babiński, J. M.
Baranowski, W. Pacuski, R. Stępniewski, and T. Tomaszewicz,
"Determination of Si d-doping
concentration in GaN by Electroreflectance", phys. stat.
sol. (b) 234, 868 (2002)
53. Self-Assembled Quantum Dots in Electric Field , in " Quantum Dots and Nanowires"
American Scientific Publishers, 2002
52. The following
article appeared in J. Appl. Phys. 92, 163 (2002) and may be found at (AIP Webpage)
Aneta Drabińska, A. Babiński, T.
Tomaszewicz, R. Bożek, and
J. M. Baranowski
" Optical determination of the dopant
concentration in the d-doping layer"
Copyright (2002) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
51. A. Babiński , M.Potemski, and H.Shtrikman,
Free-to-bound and interband
recombination in the photoluminescence of a dense two-dimensional electron gas ,
Phys. Rev. B 65 , 233307 (2002)
Copyright (2002) by the American Physical Society
50. A. Babiński and J.Jasiński
, Post-growth thermal
treatment of self-assembled InAs/GaAs
quantum dots, Thin Solid Films 412/1-2 84 (2002)
49. L.V.Dao, M.Gal, A.Babiński, and J.Jagadish; " Ultrafast
time-resolved photoluminescence measurements on InGaAs/GaAs Quantum Dots "
COMMAD 2000. Conference Proc. Conference on Optoelectronic
and Microelectronic Materials and Devices (Cat. No.00EX466), ed. L.Broekman, B.Usher, and J.
Riley, IEEE,
48. E.Ilczuk, K.P.Korona,
A. Babiński, and J.Kuhl,
"The
Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots" ,
Acta Phys.Pol. A 100,
379 (2001)
47. The following
article appeared in Appl. Phys. Lett. 79,
2576 (2001) and may be found at (AIP Webpage)
A.Babiński, J.Jasiński, R. Bożek, A. Szepielow, and J.M. Baranowski;
" Rapid thermal annealing of InAs/GaAs quantum dots under GaAs
proximity-cap "
Copyright (2001) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
46. K. P.Korona, A.Babiński,
J.Kuhl, J.M.Baranowski, and
R.Leon; "Step-like
Photoluminescence Dynamics in Field-Effect Structures Containing Quantum
Dots" phys. stat. sol. (b) 227, 605 (2001)
45. Z. Dziuba, M. Górska,
J. Antoszewski, A.Babiński,
P. Kozodoy, S. Keller, B. Keller , S. P. DenBaars, and U. K. Mishra;
" Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure
"Applied Physics A 72, 691 (2001)
44. A.Babiński, R. Kulawiński,
T. Tomaszewicz, J.M. Baranowski;
" Optical determination of delta -doping
concentration in semiconductor structures "
ASDAM 2000. Conference Proceedings. Third International EuroConference
on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386). IEEE,
43. The following
article appeared in Appl. Phys. Lett. 78,
3992 (2001) and may be found at (AIP Webpage)
A.Babiński, P.Witczak, A.Twardowski, and J.M.Baranowski;
"Electroluminescence from a forward-biased Schottky barrier diode on modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure "
Copyright (2001) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
42. A.Babiński, J.M. Baranowski, R.Leon, and C. Jagadish, "Field-Effect Structure with Double layer of
InGaAs/GaAs Quantum Dots -
a new concept of Electron Tunneling Device "
Semiconductor Quantum Dots II - 2000, Mater. Res. Soc. Proc. 642,
J.4.6.1;
41. J.Jasiński, A.Babiński,
R. Bożek, A. Szepielow, and
J.M. Baranowski, "Effects of Annealing on
Self-Assembled InAs Quantum Dots and Wetting Layer in
GaAs Matrix;
Semiconductor Quantum Dots II - 2000, Mater. Res. Soc. Proc. 642,
J3.39.1;
40. J.Jasiński, A.Babiński,
M.Czeczott, and R.Bożek,
"InGaAs/GaAs quantum
dot interdiffusion induced by cap layer overgrowth"
Morphological and Compositional Evolution of Heteroepitaxial
Semiconductor Thin Films ed. Millunchick JM; Barabasi AL; Modine NA; Jones
ED., Mater. Res. Soc. Proc. 618, pp.179-84.
39. A.Babiński, P.Witczak,
S.Lavorik, and A.Twardowski,
"Low-temperature light emission in a forward-biased Schottky
diode with a n-doped channel"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI
(Cat. No.00CH37046). IEEE,
38. J.Jasiński, A.Babiński,
R.Bożek, and J.M.Baranowski,
"Post-growth thermal treatment of InAs/GaAs quantum dots"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI
(Cat. No.00CH37046). IEEE,
37. A.Babiński, K.P.Korona,
and J.M.Baranowski, "The effect of electric
field on the self-organized quantum dots"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI
(Cat. No.00CH37046). IEEE,
36. The following
article appeared in Appl. Phys. Lett. 77,
999 (2000) and may be found at (AIP Webpage)
A.Babiński, J.Siwiec-Matuszyk, J.M.Baranowski,
G.Li, and C.Jagadish,
"Transport and quantum electron mobility in the
modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs
quantum well grown by metalorganic vapor phase epitaxy"
Copyright (2000) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
35. A.Babiński, "Photoluminescence
from InGaAs/GaAs Quantum
dots in high electric field"
NATO ANSI Conf. Ser. Optical properties of Semiconductor Nanostructures ed by M.L.Sadowski, M.Potemski, and M.Grynberg, Kluver Academic Publishers, p. 395
34. T.Tomaszewicz, A.Babiński , D.Suska, J.M.Baranowski, "Electroreflectance
Bias-Wavelength Mapping of the GaAs/InGaAs/AlGaAs structure" ,
Inst. Phys. Conf. Ser. No 166, 143 (2000)
33. A.Babiński and J.M.Baranowski,
"The effect of electron occupation on the photoluminescence from the
self-organized InGaAs/GaAs
quantum dots"
physica status solidi a 187,
313 (2000)
32. A.Babiński, T.Tomaszewicz,
A.Wysmołek, J.M.Baranowski,
C.Lobo, R.Leon, and C.Jagadish, "Optical properties of self-organized InGaAs/GaAs quantum dots in field
effect structures"
Microcrystalline and Nanocrystalline Semiconductors -
1998. Mater. Res. Soc. Proc. 536, pp.269-74.
31. The following article appeared in Appl.
Phys. Lett. 75, 2088 (1999) and may be
found at (AIP Webpage)
T. Tomaszewicz, A.Babiński
, D.Suska, J.M.Baranowski,
and A.Tomaszewicz,
" Electroreflectance
Bias-Wavelength Mapping of the modulation Si d-doped pseudomorphic
GaAs/InGaAs/AlGaAs structure"
Copyright (1999) American Institute of
Physics. This article may be downloaded for personal use only. Any other use
requires prior permission of the author and the American Institute of Physics.
30. The following
article appeared in Appl. Phys. Lett. 73,
2811 (1998) and may be found at (AIP Webpage)
A.Babiński,A.Wysmołek, T.Tomaszewicz, J.M.Baranowski, R.Leon, C.Lobo, and C.Jagadish,
"Electrically modulated photoluminescence in
self-organized InGaAs/GaAs
quantum dots"
Copyright (1998) American Institute of
Physics. This article may be downloaded for personal use only. Any other use
requires prior permission of the author and the American Institute of Physics.
29. G.Li, M.B.Johnston,
A.Babiński , S.Yuan, M.Gal, S.J.Chua, and C.Jagadish, "Si
and C d-doping for device applications" J.Cryst.
Growth 195, 54 (98)
28. A.Babiński, G.Li,
and C.Jagadish, "Magnetotransport measurements on modulation Si d-doped pseudomorphic InGaAs/GaAs quantum wells" Physica
B 246-247, 289 (1998)
27. The following
article appeared in Appl. Phys. Lett. 72,
2322 (1998) and may be found at (AIP Webpage)
G. Li, A.Babiński, S. J. Chua and C. Jagadish,
"Electron Transfer Efficiency in Si d-Modulation
Doped Pseudomorphic GaAs/InGaAs/AlGaAs QWs"
Copyright (1998) American Institute of
Physics. This article may be downloaded for personal use only. Any other use
requires prior permission of the author and the American Institute of Physics.
26. A.Babiński, G.Li,
and C.Jagadish, "The effect of band bending on
the transport properties of modulation doped pseudomorphic
InGaAs/GaAs quantum
wells"
Proceedings of the 4th Vaccum Society of Australia
Congress, Canberra 1997
25. The following article appeared in Appl. Phys. Lett. 71, 1664 (1997) and may be found at (AIP Webpage)
A.Babiński,G.Li, and C.Jagadish,
"The persistent photoconductivity effect in
modulation Si d-doped pseudomorphic InGaAs/GaAs quantum well
structure"
Copyright (1997) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
24.A.Babiński, R.Leon, and C.Jagadish, "Capacitance measurements on self-organised MOCVD grown InGaAs
quantum dots", Proc. of 1996 COMMAD-96 Conference, ed. C. Jagadish, Canberra 1996, p.183
23. The following article appeared in Appl.
Phys. Lett. 70, 3582 (1997) and may be
found at (AIP Webpage)
G.Li, A.Babiński, and C.Jagadish,
"Subband electron
densities of Si delta-doped pseudomorphic InGaAs/GaAs heterostructures"
Copyright(1997) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
22. R.Bożek, A.Babiński, J.M.Baranowski, R.Stępniewski, Z.
Klusek, W. Olejniczak, K. Starowieyski, and J.Wróbel,
"GaSb dots grown on GaAs
surface by MOCVD", Acta Phys. Pol. A 88, 974 (1995).
21. A.Babiński and J.M.Baranowski, "Splitting of the acceptor
level of the metastable EL2 under uniaxial
stress", Proc. of 22nd ICPS,
20. A.Babiński, A.Wysmołek,
and J.M.Baranowski,
"Splitting of the metastable
EL2 acceptor state" , Phys. Rev. B 50, 10656 (1994)
Copyright (1994) by the American Physical Society
19. T.Słupiński, A.Wysmołek,
M.Leszczyński, A.Babiński,
A.Kurpiewski, A.Barcz, and R.Stępniewski,
"Single crystals of GaAsP grown by the Czochralski method,
"Semi-Insulating III-V Materials Conference, Warszawa 1994", ed. M.Godlewski, 39.
18. A.Babiński and A.Wysmołek,
"Orientational degeneracy of the acceptor level
of the metastable EL2", "Semi-Insulating
III-V Materials Conference, Warszawa 1994", ed. M.Godlewski,
221.
17. A.Babiński and A.Wysmołek,
"Orientation of the metastable EL2 under uniaxial stress", Acta Phys. Pol. A 87, 137 (1995).
16. A.Babiński, "Pokaz efektu Halla
na sali wykladowej", Postepy
Fizyki, 45, (1994), 169 (in Polish)
15. A.Babiński, A.Wysmołek,
and M.Baj, "Symmetry of the acceptor-like state
of the EL2 defect in the metastable configuration",
Mat.Sc.Forum, vol. 143-147, 1051 (1994)
14. P.Trautman, J.M.Baranowski,
and A.Babiński, "Ordering of the EL2
defect in the metastable state", Mat.Sc.Forum, vol. 143-147, 1007 (1994)
13. A.Babiński, A.Wysmołek,
and T.Słupiński,
"DLTS measurements of an acceptor-like state of metastable
EL2 in GaAs and GaAsP",
Acta Phys. Pol., A 84, 673 (1993)
12. A.Wysmołek, R.Bozek,
A.Babiński , and A.M.Hennel,
"Hydrostatic pressure spectroscopy of the vanadium luminescence in GaAs", Acta Phys.Pol. A 82, 837 (1992)
11. A. Babiński, J.Przybytek,
M.Baj, P.Omling, L.Samuelson, and T.Słupiński, "Hydrostatic-pressure DLTS study of the heteroantisite antimony level in GaAs",
Acta Phys.Pol. A 82,
841 (1992)
10. A.Babiński and A.Wysmołek,
"The electrical properties of an acceptor-like state of metastable EL2 in n-type GaAs
under uniaxial stres" , Acta Phys.Pol.
A 82, 908 (1992)
9. A.Babiński, K.P.Korona,
and A.M.Hennel, "Properties of the Fe acceptor
level in InP under hydrostatic pressure",
"Semi-Insulating III-V Materials Conference, Ixtapa
1992", ed. B.Ford, C.Miner,
E.R.Weber, 253
8. M.Baj, P.Dreszer, and A.Babiński,
Pressure-induced
charge state of EL2 defect in its metastable state,
Phys. Rev. B 43, 2070 (1991)
Copyright (1991) by the American Physical Society
7. J.Muszalski, A.Babiński,
K.P.Korona, E.Kamińska, A.Piotrowska, M.Kamińska, and E.R.Weber, "First TSC and DLTS measurements of low
temperature GaAs", Acta Phys.Pol. A 80, 413
(1991)
6. A.Babiński and E.Gołdys,
"Passivation of a bulk defect EC-0.22eV in GaAs in phosphoric acid", Acta Phys.Pol. A 79, 277
(1991)
5. A.Babiński, M.Baj,
and A.M.Hennel, "The pressure dependence of
transition metal-related levels in GaAs", Acta Phys.Pol.
A 79, 323 (1991)
4. M.Baj, P.Dreszer,
and A.Babiński, "Acceptor-like level of the EL2 defect
in its metastable configuration", Proc. of 20th
ICPS Saloniki 1990, ed. E.M.Anastassakis,
3. M.Baj, P.Dreszer,
and A.Babiński, "Acceptor-like level of the EL2 defect in its metastable
configuration", Acta Phys. Pol. A 79, 129
(1991)
2. K.P.Korona, K.Karpińska,
A.Babiński,,
and A.M.Hennel, "Deep Level Transient
Spectroscopy measurements of p-type InP", Acta Phys. Pol. A 77, 71 (1990)
1. A.Babiński, J.M.Baranowski, and M.Czub,
"Deep Levels in GaAs prepared by VPE", Acta Phys.Pol.
A 77, 335 (1990)