| H. Komaki, K. Yoshino, M. Yoneta, Y. Akaki and T. Ikari | CHARACTERIZATION of Sb-DOPED p-TYPE CuInS2 CRYSTALS |
| Hiromichi Nagao and TakaoWada | ALGORITHM ANIMATION SYSTEM for SUPERDIFFUSION in SEMICONDUCTORS USING COMPUTER GRAPHICS |
| I.N.Yassievich, M.A.Odnoblyudov, A.A.Prokofiev, V.M.Chistyakov, and K.A.Chao | ACCEPTOR RESONANT STATES and THz LASING in STRAINED SEMICONDUCTORS and SEMICONDUCTOR NANOSTRUCTURES |
| I.V.Antonova, S.A.Smagulova | Formation of the Shallow donors and acceptors in Silicon irradiated with either electron or high energy ions and annealed at temperatures 400-700oC |
| J.L. Nie, L.B. Lin and W. Xu | HYDROGEN-LIKE IMPURITIES in SEMICONDUCTORS in INTENSE TERAHERTZ LASER FIELDS |
| L.I. Khirunenko, V. Kobzar, Yu.V. Pomozov, M.G. Sosnin, V.P. Markevich, L.I. Murin, and A.R. Peaker | DEFECT-IMPURITY INTERACTIONS in IRRADIATED TIN-DOPED Cz-Si CRYSTALS |
| L.T. Ho | SINGLY IONIZED MAGNESIUM-OXYGEN COMPLEX IMPURITIES in SILICON |
| Leonid I. Skatkov | CHANGE in the CONCENTRATION of SHALLOW -LEVEL CENTERS in Nb2O5 SEMICONDUCTOR FILMS CAUSED by GENERATING ANION DEFECTS on their SURFACE |
| M. Kaniewska, I. V. Antonova, and V. P. Popov | STUDY of COMPLEX CARRIER PROFILES in HYDROGEN IMPLANTED and ANNEALED SILICON |
| N. A. Bekin, R. Kh. Zhukavin, L. V. Krasilnikova, V. N. Shastin, B. N. Zvonkov | THZ RADIATION FROM OPTICALLY PUMPED N-TYPE GaAs/InGaAs MULTI QUANTUM WELL HETEROSTRUCTURES |
| N. Pinho, J. Coutinho, R. Jones P.R. Briddon | SHALLOW RELATED LEVELS of the SELF-INTERSTITIALTRAPPED by OXYGEN in SILICON |
| Nakanishi, N. Fukata and M. Suezawa | COMPLEXES of POINT DEFECTS and IMPURITIES in ELECTRON-IRRADIATED n-TYPE Cz-Si PRE-DOPED with HYDROGEN |
| S.G. Pavlov | ELECTRICALLY PUMPED FAR-INFRARED POPULATION INVERSION IN HETEROSTRUCTURES DOPED BY SHALLOW IMPURITY CENTRES |
| S.I. Budzulyak, Yu.P. Dotsenko, V.M. Ermakov, V.V. Kolomoets, B.B. Suss, E.F. Venger and V.I. Khivrich | Thermodonor Activation Energy in Transmutation Doped n-Si(P) |
| Shosuke MOCHIZUKI and Fumito FUJISHIRO | SHALLOW- and DEEP-EXCITED STATES of MESOSCOPIC STRUCTURE in AgI-gAl2O3 COMPOSITES |
| Shosuke MOCHIZUKI and Fumito FUJISHIRO | SHALLOW- and DEEP-LUMINESCENCE CENTERS in AgI-BASED SUPERIONIC CONDUCTOR GLASS |
| Xu Jin, Deren Yang, Chunlong Li, Xiangyang Ma, Duanlin Que, and A. Misiuk | THERMAL DONORS in NITROGEN-DOPED SILICON ANNEALED at 450 °C under HIGH PRESSURE of 1GPa |
| Y. Kamiura, K. Fukuda, Y. Iwagami, T. Fukuda, T. Ishiyama, and Y. Yamashita | Study of the electronic state and structure related to a platinum-dihydrogen complex in Si and charge-state-dependent cage MOTION of HYDROGEN in the COMPLEX |
| Y. Ohmura, M. Suzuki, M. Takahashi, A. Emura, N. Sakamoto, T. Meguro and Y. Yamamoto | n-TYPE (P, Sb) and p-TYPE (B) DOPING of HYDROGENATED AMORPHOUS Si by REACTIVE RF CO-SPUTTERING |
| Y.X. Li, M.X. Pan, T.J. Liu, Q.Y. Hao, C.C. Liu, Y.S. Xu, D.R. Yang and D.L. Que | DEPTH PROLIFES of THERMAL DONORS in NTD-CZ-Si |
| M. Kravtsiv, O. Shpotyuk, A. Kovalskiy | ON the PROBLEM of TRAPPING CENTERS FORMATION in ORGANIC POLYCYCLIC COMPOUNDS |