Laboratory of Molecular Beam Epitaxy (MBE)


Our lab was constructed in the frame of Centre for Preclinical Research and Technology (CePT). It belongs to the Solid State Physics Division, Instiute of Experimental Physics, Faculty of Physics, University of Warsaw. The lab is placed at Pasteura 7 street.

Molecular Beam Epitaxy is a crystal growth technique. In MBE growth is realized in ultra high vacuum, at very low depostion rate - about one monolayer per second. We are using MBE for growth of thin semiconductor layers and heterostructures.

Our MBE machine contains two growth chambers:
- III-V chamber for growth of arsenides and antimonides.
- II-VI chamber for growth of tellurides and selenides.

The machine was fabricated and delivered by company SVT Associates from Minneapolis, USA


MBE lab at Univeristy of Warsaw

Our Team :

Dr. Tomasz Słupiński, responsible for III-V chamber


Dr. Wojciech Pacuski , responsible for II-VI chamber


mgr Jakub Kobak (left) and mgr Jean-Guy Rousset (right),
PhD students working on II-VI semiconductor structures: quantum dots and microcavities.


We started growth on September 29, 2011.

RHEED image of our first layer, GaAs on GaAs substrate.

We have grown so far more than 100 samples.

In III-V growth chamber:

- GaAs, AlAs, and GaInAs layers,
- GaInAs/GaAs and GaAs/GaAlAs quantum wells,
- InAs/GaAs quantum dots,
- GaAs/AlAs Distrubuted Bragg Reflectors.

In II-VI growth chamber:

- ZnSe, ZnTe, CdTe, CdZnTe, CdMgTe layers,
- Diluted Magnetic Semiconductors: CdMnTe, ZnMnTe, ZnCoTe,
- CdTe/CdMgTe quantum wells,
- CdTe/ZnTe quantum dots including QDs with ultra low density and with single manganese ions (!)
- various Distrubuted Bragg Reflectors based on CdTe and CdZnTe,
- microcavites with CdTe quantum wells.

All samples were characterized using optical spectroscopy (PL, reflectivty)

We are open to scientific cooperation.