83. E. Przezdziecka, E. Kaminska, K. P. Korona, E. Dynowska, W. Dobrowolski, R. Jakieła, W. Pacuski, L. Kłopotowski, J. Kossut, "Optical properties of p-type ZnO and ZnMnO doped by N and/or As acceptors", AIP Conference Proceedings 893, pp. 339-340, W. Jantsch, F. Schaffler, (2007)
82. J. Suffczyński, T. Kazimierczuk, M. Goryca, B. Piechal, A. Trajnerowicz, K. Kowalik, P. Kossacki, A. Golnik, K. P. Korona, M. Nawrocki, J. A. Gaj, G. Karczewski, “Spin-dependent dynamics of individual CdTe/ZnTe quantum dot states studied by correlation spectroscopy.”, Proc. of SPIE The International Society for Optical Engineering 6471, pp. 647101-647109, (2007)
81. K. P. Korona, J. Borysiuk, C. Skierbiszewski, S. Porowski, "Influence of electric field on recombination dynamics of quantum confined carriers" Acta Phys. Pol. A 112, p. 243 (2007)
80. E. Przeździecka, E. Kaminska, K. P. Korona, E. Dynowska, W. Dobrowolski, R. Jakiela, L. Klopotowski and J. Kossut, “Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors” , Semicond. Sci. Technol. 22, pp. 10-14 (2007)
79. A. Drabińska, K. P. Korona, K. Pakuła and J. M. Baranowski, "Electroreflectance and photoreflectance spectra of tricolor nitride detector structures”, phys. stat. sol. (a) 204, pp. 459–465 (2007)
78. Krzysztof P. Korona, Adam Babiński, S. Raymond Z. Wasilewski, “Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System", Acta Phys. Pol. A 110, p. 219 (2006)
77. Krzysztof P. Korona, Aneta Drabińska, Krzysztof Pakuła, Jacek M. Baranowski, “Multiband GaN/AlGaN UV photodetector", Acta Phys. Pol. A 110, p. 211 (2006)
76. J. Suffczynski, B. Piechal, P. Kossacki, T. Kazimierczuk, A. Trajnerowicz, M. Goryca, A. Golnik, K. P. Korona, K. Kowalik, M. Nawrocki, J. A. Gaj, G. Karczewski, “Excitation mechanisms of individual CdTe/ZnTe quantum dots studied by photon correlation spectroscopy", Phys. Rev. B 74, 085319 (2006),
75. K. P. Korona, C. Skierbiszewski, M. Siekacz, A. Feduniewicz, T. Suski, G. Franssen, I. Grzegory, J. Borysiuk, M. Leszczyński, "Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates" phys. stat. sol. (c) 3, pp. 1962–1965 (2006)
74. K. P. Korona, A. Wysmołek, J. Kuhl, M. Kamińska, J. M. Baranowski, D. C. Look, S. S. Park "Coupling of phonons with excitons bound to different donors and acceptors in hexagonal GaN" phys. stat. sol. (c) 3, pp. 1940–1943 (2006)
73. K.P. Korona, A. Wysmolek, M. Kamińska, A. Twardowski, M. Piersa, M. Palczewska, G. Strzelecka, A. Hruban, J. Kuhl, R. Adomavicius and A. Krotkus, "Manganese as a fast charge carrier trapping center in InP", Physica B: Condensed Matter, 382, pp. 220-228 (2006)
72. K. P. Korona, K. Pakuła, R. Bożek, A. Drabińska, K. Surowiecka, R. Stępniewski, E. Zielińska-Rohozińska and J.M. Baranowski, "Potential and Carrier Distribution in AlGaN Superlattice", Acta Phys. Pol. A 108, pp. 723-729 (2005)
71. K.P. Korona, A. Wysmolek, R. Stepniewski, J. Kuhl, D.C. Look, S.K. Lee and J.Y. Han, "Dynamics of Ground and Excited States of Bound Excitons in Gallium Nitride", J. Lumin. 112, pp. 30-33 (2005)
70. B. Chwalisz, A. Wysmolek, K. P. Korona, R. Stępniewski, C. Skierbiszewski, I. Grzegory, S. Porowski, "Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells", phys. stat. sol. (c) 2, pp. 1010-1013 (2005)
69. K. P. Korona, B. Chwalisz, A. Wysmołek, R. Stępniewski, K. Pakuła, J. M. Baranowski, J. Kuhl, "Recombination dynamics in GaN/AlGaN low dimensional structures obtained by SiH4 treatment", phys. stat. sol. (c) 2, pp. 1069-1072 (2005)
68. K.P. Korona, P. Wojnar, J. A. Gaj, G. Karczewski, J. Kossut and J. Kuhl, "Influence of Quantum Dot Density on Excitonic Transport and Recombination in CdZnTe/ZnTe QD Structures", Solid State Commun. 133, pp. 369-373 (2005)
67. A. Wysmolek, K. P. Korona, R. Stępniewski, J. M. Baranowski, J. Błoniarz, M. Potemski, R. L. Jones, D. C. Look, J. Kuhl, S. S. Park, and S. K. Lee, Reply to "Comment on `Recombination of excitons bound to oxygen and silicon donors in freestanding GaN' ", Phys. Rev. B 69, 157302 (2004) (3 pages)
66. B. Macieja, K. P. Korona, M. Piersa, A. M. Witowski, D. Wasik, A. Wysmołek, G. Strzelecka, A. Hruban, B. Surma, M. Palczewska, M. Kaminska, A. Twardowski, "Formation of Mn-related defect band in InP", Acta Phys. Pol. A 103, p 637-642 (2003)
65. B. Chwalisz, A. Wysmołek, R. Bożek, K.P. Korona, R. Stępniewski, W. Knap, K. Pakuła, J.M. Baranowski, N. Grandjean, J. Massies, P. Prystawko and I. Grzegory, "Localization Effects in GaN/AlGaN Quantum Well -- Photoluminescence Studies"", Acta Phys. Pol. A 103, p. 573-578 (2003)
64. K. P. Korona, A. Drabińska, A. Trajnerowicz, R. Bożek, K. Pakuła, J. M. Baranowski, "Tuning of spectral sensitivity of AlGaN/GaN UV detector"", Acta Phys. Pol. A 103, p. 675-681 (2003)
63. J. Łusakowski, G. Cywiński, K. Korona, W. Knap, J. Kossut, "Mixing of impurity levels by a built-in electric field in a CdMgTe/CdZnTe heterostructure", phys. stat. sol. (c) 0, 605-608 (2003)
62. K. P. Korona, R. Doradziński, M. Palczewska, M. Pietras, M. Kamińska, J. Kuhl, "Properties of Zinc Acceptor and Exciton Bound to Zinc in Ammonothermal GaN", phys. stat. sol. (b) 235, 40-43 (2003)
61. A. Drabińska, K. P. Korona, R. Bożek, J. M. Baranowski, K. Pakuła, T. Tomaszewicz, “Investigation of 2D electron gas on AlGaN/GaN interface by Electroreflectance”, phys. stat. sol. (c) 0, No. 1, 329-333 (2003) - proceedings of IWN 2002, Aachen, Germany
60. K. P. Korona, A. Wysmołek, R. Stępniewski, M. Potemski, J. Kuhl, J. M. Baranowski, G. Martinez, I. Grzegory, S. Porowski, "Dynamics of Trapping on Donors and Relaxation of the B-Exciton in GaN", phys. stat. sol. (b) 235, 31-35 (2003)
59. A. Wysmołek, K. P. Korona, R. Stępniewski, J. M. Baranowski, J. Błoniarz, M. Potemski, R. L. Jones, D. C. Look, J. Kuhl, S. S. Park, S. K. Lee, "Recombination of excitons bound to oxygen and silicon donors in freestanding GaN", Phys. Rev. B 66, 245317 (2002) (7 pages)
58. A. Drabińska, K. P. Korona, R. Bożek, A. Babiński, J. M. Baranowski, W. Pacuski, R. Stępniewski, T. Tomaszewicz, "Determination of Si d-doping concentration in GaN by Electroreflectance", phys. stat. sol. (b) 234, p. 868-871 (2002)
57. A. Krotkus, K. Bertulis, M. Kaminska, K. Korona , A. Wolos, J. Siegert, S. Marcinkievicius, J.-F. Roux, J.-L. Coutaz, "Be-doped low-temperature-grown GaAs material for optoelectronic switches", IEE Proc.-Optoelectron. 149, p. 111-115 (2002)
56. R. Stepniewski A. Wysmolek, K. P. Korona, J. M. Baranowski, "Optical properties of Homoepitaxial GaN" in "III-Nitride Semiconductors Optical Properties I", Ed. M. O. Manasreh and H. X. Jiang, Taylor&Francis Books Inc. New York 2002 K.P.K has written subchapters: "5.2.1 Polariton structure, 5.2.2 Reflection and absorption, 5.2.3 Temperature dependence, 5.2.4 Pressure dependence" (pp. 200-215)
55. K. P. Korona,
"Dynamics of excitonic recombination and interactions in homoepitaxial GaN",
Phys. Rev. B 65, p. 235312 (2002), (8 pages), selected for the June 2002 issue of
the Virtual Journal of Ultrafast Science
54. K. P. Korona, P. Prystawko, M. Leszczynski, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Kuhl,
"Influence of the Substrate on the Photo-Luminescence Dynamics in GaInN Epilayers",
Materials Science & Engineering B 93, pp. 73-76 (2002) (Proceedings of The E-MRS Spring Meeting 2001)
53. E. Ilczuk, K. P. Korona, A. Babiński, J. Kuhl,
"The Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots" ,
Acta Phys. Pol. A 100, p. 379-386 (2001)
52. K. P. Korona, "Exciton dynamics in homoepitaxial GaN in the picosecond regime", in "Ultrafast Phenomena in Semiconductors V" editors: H. Jiang, K. T. Tsen, J. Song, Proceedings of SPIE 4280 (invited talk) p. 9-19 (2001), The Society of Photo-Optical Instrumentation Engineers
51. K. P. Korona, A. Babiński, J. Kuhl, J. M. Baranowski, R. Leon,
"Step-like Photoluminescence Dynamics in Field-Effect Structures Containing Quantum Dots",
phys. stat. sol. (b) 227, p. 605-612 (2001)
50. S. Marcinkevičius, C. Jagadish, H. H. Tan, M. Kaminska, K. Korona, R. Adomavičius, A. Krotkus,
"Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-on GaAs layers",
Appl. Phys. Lett. 76, p. 1306-1308 (2000)
49. J.-L. Coutaz, J.-F. Roux, A. Gaarder, S. Marcinkievicius, J. Jasiński, K. Korona, M. Kaminska, K. Bertulis, A. Krotkus,
"Be-doped low temperature grown GaAs for ultrafast optoelectronic devices and applications",
Proceedings of 11th Intern. Semiconducting and Insulating Materials Conference (XI SIMC), Canberra 2000, Eds. C.Jagadish and N.J.Welham, IEEE Publishing, 2000, p. 89
48. A. Babinski, K. P. Korona, J. M. Baranowski,
"The effect of electric field on the self-organised quantum dots", Proceedings of 11th Intern. Semiconducting and Insulating Materials Conference (XI SIMC), Canberra 2000, Eds. C.Jagadish and N.J.Welham, IEEE Publishing, 2000, p. 232
49. J.-L. Coutaz, J.-F. Roux, A. Gaarder, S. Marcinkievicius, J. Jasiński, K. Korona, M. Kaminska, K. Bertulis, A. Krotkus,
"Be-doped low temperature grown GaAs for ultrafast optoelectronic devices and applications", Proceedings of 11th Intern. Semiconducting and Insulating Materials Conference (XI SIMC), Canberra 2000, Eds. C.Jagadish and N.J.Welham, IEEE Publishing, 2000, p. 89
47. A. Christ, H. Giessen, W.W. Rühle, K. Korona, J. Kuhl, M. Zundel, Y. Manz, and K. Eberl,
"Carrier Dynamics in Stacked InP/GaInP Quantum Dots" ,
phys. stat. sol. (b) 221 p. 59-63 (2000)
46. M. Klose, K.P.Korona, J.Kuhl, M.Heuken,
"Photoluminescence Dynamics in InGaN/GaN Quantum Wells with Different In Concentration" ,
phys. stat. sol. (b) 216, p. 325-329 (1999)
45. K. P. Korona, J. Kuhl, J. M. Baranowski, S. Porowski,
"Excitonic Thermalization and Recombination in Homoepitaxial Gallium Nitride" ,
phys. stat. sol. (b) 216, p. 85-89 (1999)
44. K. P. Korona, J. Kuhl, J. M. Baranowski,
"Temporally and spatially resolved spectroscopy of GaN" ,
phys. stat. sol. (b) 215, p. 53-58 (1999)
43. Z.X. Liu, K. P. Korona, K. Syassen, J. Kuhl, K. Pakula, J. M. Baranowski, I. Grzegory, S. Porowski,
"Efect of pressure on Exciton Energies of Homoepitaxial GaN",
Solid State Commun. 108, 433-438 (1998)
42. I.A. Buyanova, J.P. Bergman, B. Monemar, H. Amano, I. Akasaki, A. Wysmolek, P. Lomiak, J.M. Baranowski, K. Pakula, R. Stepniewski, K.P. Korona, I. Grzegory, M. Bockowski, S. Porowski,
“Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN”,
Solid State Commun. 105, 497-501 (1998)
41. R. Stepniewski , A. Wysmolek, M. Potemski, J. Lusakowski, K. Korona, K. Pakula, J. M. Baranowski, G. Martinez, P. Wyder, I. Grzegory, S. Porowski,
Invited talk: "Impurity related luminescence of homoepitaxial GaN studied with high magnetic fields"
Proceedings of 8th SLCS, Montpellier 98, phys. stat. sol. (b) 1998, 210, No. 2, 373-383
40. K. P. Korona, A. Wysmolek, J. M. Baranowski, K. Pakula, J. P. Bergman, B. Monemar, I. Grzegory, S. Porowski,
"Interactions of LO Phonons with Bound Excitons in Homoepitaxial GaN",
Proceedings of Materials Research Society Fall Meeting, Boston 1997, Mat. Res. Soc. 482, 501 (1998)
39. K. P. Korona, K. Pakula, A. Wysmolek, J. M. Baranowski, J. P. Bergman, B. Monemar, T. Lukasiewicz, Z. Luczynski,
"Luminescence of a New Material: GaN Grown on NdGaO3",
Proceedings of Materials Research Society Fall Meeting, Boston 1997, Mat. Res. Soc. 482, 725 (1998)
38. J. M. Baranowski, Z. Liliental-Weber, K. P. Korona, K. Pakula, R. Stepniewski, A. Wysmolek, I. Grzegory, G. Nowak, S. Porowski, B. Monemar, J. P. Bergman, Invited talk: "Structural and Optical Properties of Homoepitaxial GaN Layers" MRS Proc. 449, p. 393-405 (1997)
37. K. P. Korona, J. P. Bergman, B. Monemar, J. M. Baranowski, K. Pakula, I. Grzegory, S. Porowski,
"Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers"
Proc. of ICDS-19, Eds. G. Davies, M. H. Nazaro, Mat. Sci. Forum 258-263, p. 1125 (1997)
36. K. P. Korona, J. M. Baranowski, J. P. Bergman, B. Monemar, I. Grzegory, S. Porowski,
"Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers",
Acta Phys. Pol. A 92, p. 841-844 (1997)
35. K. P. Korona, R. Stepniewski, J. M. Baranowski,
"Dielectric Function Theory Calculations of Polaritons in GaN",
Acta Phys. Pol. A 92, p. 867-870 (1997)
34. R. Stepniewski, K. P. Korona, A. Wysmolek, J. M. Baranowski, K. Pakula, M. Potemski, G. Martinez, I. Grzegory, S. Porowski,
"Polariton effects in reflectance and emission spectra of homoepitaxial GaN",
Phys. Rev. B 56, p. 15151 (1997)
33. H. H. Tan, C. Jagadish, K. P. Korona, J. Jasinski, M. Kaminska, R. Viselga, S. Marcinkevicius, A. Krotkus,
"Ion-Implanted GaAs for Subpicosecond Optoelectronic Devices",
IEEE J. Selected Topics in Quantum Electronics 2, p. 636-642 (1996)
32. A. Wysmolek, K. P. Korona, K. Pakula, J. M. Baranowski, R. Stepniewski, Proc. of XXIII Int. Conf. on Phys. Semicond. Berlin 1996, ed.: M.Scheffler, R. Zimmermann, vol. 4, p. 2925-2928 (1996)
31. C. Jagadish, H. H. Tan, A. Krotkus, S. Marcinkevicius, K. P. Korona, M. Kaminska,
"Ultrafast carrier trapping in high energy ion implanted gallium arsenide",
Appl. Phys. Lett. 68, no.16, p. 2225 (1996)
30. A. Wysmolek, P. Lomiak, J. M. Baranowski, K. Pakula, R. Stepniewski, K. P. Korona, I. Grzegory, M. Bockowski, S. Porowski,
"Coupling of LO Phonons to Excitons in GaN", Acta Phys. Pol. A 90, p. 981-984 (1996)
29. T. Tomaszewicz, K. P. Korona, R. Bozek, J. M. Baranowski,
"Photoreflectance measurements of InGaAs/GaAs Quantum Wells",
Acta Phys.Pol. 90, p. 965-968 (1996)
28. A. A. Sliwinski, K. P. Korona, K. Pakula, J. M. Baranowski,
"Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire",
Acta Phys. Pol. A 90, p. 955-958 (1996)
27. K. P. Korona, J. Jasinski, A. Kurpiewski, M. Kaminska, C. Jagadish, H. H. Tan, A. Krotkus, S. Marcinkevicius,
"Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs",
Acta Phys.Pol. A 90, p. 851-854 (1996)
26. K. P. Korona, A. Wysmolek, K. Pakula, R. Stepniewski, J. M. Baranowski, I. Grzegory, B. Lucznik, M. Wróblewski, S. Porowski,
"Exciton Region Reflectance of Homoepitaxial GaN Layers",
Appl. Phys. Lett. 69, no.6, p. 788-90 (1996)
25. K. Pakula, A. Wysmolek, K. P. Korona, J. M. Baranowski, R. Stepniewski, I. Grzegory, M. Boćkowski, J. Jun, S. Krukowski, M. Wróblewski, S.Porowski,
"Luminescence and Reflectivity in the Exciton Region of Homoepitaxial GaN Layers Grown on GaN Substrates",
Solid State Commun. 97, p. 919 (1996)
24. A. Wysmolek, J. M. Baranowski, K. Pakula, K. P. Korona, I. Grzegory, M. Wroblewski, S. Porowski,
"Donor-Acceptor Pair Spectra in p-type Homoepitaxial GaN Layers", Proc.of Int. Symp. on Blue Laser and LED, Chiba'96, ed.A.Yoshikawa, K.Kishino, M.Kobayashi, T.Yasuda, Ohmsha Ltd. IOS Press Inc. p. 492 (1996)
23. S. Porowski, J. M. Baranowski, M. Leszczynski, J. Jun, M. Bockowski, I. Grzegory, S. Krukowski, M. Wroblewski, B. Lucznik, G. Nowak, K.Pakula, A.Wysmolek, K.P.Korona, R.Stepniewski,
"Physical Properties of GaN Single Crystalline Substrates and Homoepitaxial Layers", Proc. of Int. Symp. on Blue Laser and LED, Chiba'96, ed.A.Yoshikawa, K.Kishino, M.Kobayashi, T.Yasuda, p. 38 (1996)
22. K. Pakula, A. Wysmolek, K. P. Korona, J. M. Baranowski, R. Stepniewski, I. Grzegory, M. Bockowski, J. Jun, S. Krukowski, M. Wroblewski, S. Porowski,
"Growth of GaN MOCVD Layers on GaN Single Crystals", Heterostructure Epitaxy and Devices, ed. J.Novak and A.Schlachetzki, p. 33-36, Kluwer Acad. Publ. 1996
21. H. H. Tan, C.Jagadish, M.Kaminska, J. Jasinski, A. Kurpiewski, K. P. Korona, M. Palczewska, A. Krotkus, S. Marcinkievicius,
"A Study of MeV As and Ga Ion Implanted GaAs", Proc. of 9th Int. Conf. on Ion Beam Modification of Materials (1995)
20. M.Palczewska, J.Jasinski, K.Korona, M. Kaminska, E. D. Bournet, A. G. Elliot,
"Antisite Defects Created in Neutron Irradated GaP Crystals", J. Appl. Phys. 78, p. 3680 (1995)
19. J.Jasinski, A.Kurpiewski, K.Korona, M. Kaminska, M. Palczewska, A. Krotkus, S. Marcinkievicius, Z. Liliental-Weber, H. H. Tan, C. Jagadish,
"Role of Arsenic Antisite Defects in Nonstoichiometric Gallium Arsenide", Acta Phys. Pol. A 88, p. 747-750 (1995)
18. K. P. Korona,
Invited talk: "Arsenic Antisite Defects Correlations in Low Temperature MBE GaAs", Acta Phys. Pol. A 88, p. 643-653 (1995)
17. K. P. Korona, M. Kaminska, J. M. Baranowski,
"Deep Donor - Acceptor Correlations in Low Temperature GaAs", (Proc. of ICDS-18, Sendai'95), Mat. Sci. Forum 201, p. 1773-1778 (1995)
16. A. Kurpiewski, K.Korona, M.Kaminska, M. Palczewska, C. Jagadish, J. Williams,
"Electrical and Optical Properties of Highly Non-Stoichiometric GaAs", Acta Phys. Pol. A 87, p. 518-521 (1995)
15. K. P. Korona, M. Kaminska, J. M. Baranowski,
"Model of Hopping Between Deep Centers in Low Temperature GaAs", Acta Phys. Pol. A 87, p. 337-340 (1995)
14. A. Kurpiewski, K. Korona, M. Palczewska, C. Jagadish, J. Williams, M. Kaminska,
"High Resistivity of GaAs Implanted with MeV As Ions", Proc. of 8th Conf. on Semi-Insulating III-V Materials, Warsaw'94, Word Scientific Publishing 1994, ed. M.Godlewski, p. 271-274
13. K. P. Korona, J. M. Baranowski, M. Kaminska,
"Mobility of Excited Carriers in Low Temperature GaAs", Proc. of 8th Conf. on Semi-Insulating III-V Materials, Warsaw'94, Word Scientific Publishing 1994, ed. M.Godlewski, p. 335-338
12. R. Bozek, K. P. Korona, G. Nowak, D. Wasik, T. Slupinski, P. Kaczor,
"Highly Compensated GaAs Crystal obtained by Molecular CO Doping", Acta Phys. Pol. A 84, p. 669-672 (1993)
11. K. P. Korona, M. Kaminska, J. M. Baranowski, E. R. Weber,
"Electro-Optical Measurements of Low Temperature GaAs", Mater. Sci. Eng. B 22, p. 41-44 (1993)
10. R. Dwilinski, M. Palczewska, P. Kaczor, K. Korona, A. Wysmolek, R. Bozek, M. Kaminska,
"Optical and Electrical Studies of FR1 and FR2 Defects in GaAs", Acta Phys. Pol. A 82, p. 613-616 (1992)
9. J. Jasinski, M. Palczewska, K. Korona, M. Kaminska, E. D. Bourret, G. Elliot,
"Defect Studies in As Grown and Neutron Irradiated Phosphorus Rich GaP", Acta Phys. Pol. A 82, p. 829-832 (1992)
8. K. P. Korona, A. Wysmolek, R.Bozek, M. Kaminska, J. M. Baranowski, E. R. Weber,
"Optical and Electrical Measurements of Low Temperature InAlAs", Acta Phys. Pol. A 82, p. 825-829 (1992)
7. K. P. Korona, J. Muszalski, M. Kaminska, E. R. Weber,
"Deep Defects in Low Temperature GaAs", Acta Phys. Pol. A 82, p. 821-824 (1992)
6. A. Babinski, K. P. Korona, A. M. Hennel,
"Properties of the Fe Acceptor Level in InP Under Hydrostatic Pressure", Proc. of Semi-insulating III-V Materials Conference, Ixtapa'92, p. 253-258 (1992)
5. J. Muszalski, A. Babinski, K. P. Korona, E. Kaminska, A. Piotrowska, M. Kaminska, E. R. Weber,
"First TSC and DLTS Measurements of Low Temperature GaAs", Acta Phys. Pol. A 80, p. 413-416 (1991)
4. K. P. Korona, G. Bremond, A. M. Hennel,
"Electrical and Optical Properties of Ni in p-type InP", Proc. of 3rd Int. Conf. on Indium Phosphide and Related Materials, Cardiff'91, p. 323 (1991)
3. K. P. Korona, K. Karpinska, A. Babinski, A. M. Hennel,
"Deep Level Transient Spectroscopy Measurements of p-type InP", Acta Phys. Pol. A 77, p. 71-74, (1990)
2. K. P. Korona, A. M. Hennel,
Identification of a Nickel Double-Acceptor State in Indium Phosphide.",
Appl. Phys. Lett. 55, p. 1085-1087 (1989)
1. K. P. Korona, A. M. Hennel, J. M. Baranowski,
"Ni-related Level in InP at Ec-0.27eV.", Acta Phys. Pol. A 75, p. 147-150 (1989)
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