The Conference covers a broad range of topics concerned with the
fundamental properties of shallow-levels in semiconductors and with impurity
related issues of importance to semiconductor technology e.g.:
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Single and multiple donors and acceptors,
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Shallow excited states of deep-level impurities,
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Impurity related properties of mesoscopic and/or low dimensional systems,
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Impurity-bound excitons,
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Defect interaction on the atomic scale, such as impurity-pair or complex
formation and metal insulator transition,
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New methods in shallow-level states theory,
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New experimental techniques,
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Aspects relevant to applications such as specific semiconductors, photonics,
impurity-induced limitations to miniaturization of devices.
Tentative sessions titles
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Shallow levels in low dimensional systems.
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Shallow levels in wide gap semiconductors, e.g. diamond, SiC, GaN, ZnO.
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Shallow levels in “classical” semiconductors, like Ge, Si, GaAs.
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Frontiers.