Topological semimetals, such as Wyel semimetals and Dirac semimetals exhibit amazing electronic properties, when they are studied in bulk form. We are working on epitaxial, wafer scale version of such materials. In particular, recently we reported on the first epitaxial TaAs,

Fig. 1. The first epitaxial layer of TaAs MBE grown on GaAs.

   "Structural properties of TaAs Weyl semimetal thin films grown by molecular beam epitaxy on GaAs(001) substrates",
J. Sadowski, J. Z. Domagała, W. Zajkowska, S. Kret, B. Seredyński, M. Gryglas-Borysiewicz, Z. Ogorzałek, R. Bożek, W. Pacuski,
Cryst. Growth Des. 22, 6039 (2022).    

Subject is really hot now, and high impact factor journal asked me for Preview article on epitaxy of TaAs,
   "Uniting Weyl semimetals and semiconductors in a family of arsenides",
W. Pacuski,
Matter 6, 2626 (2023).   [Matter with IF = 18.9 is a journal of Cell Press]

Recently, we reported also on the first MBE growth of NiTe2 Direct semimetal

Fig. 2. MBE growth of NiTe2 on GaAs (111).

   "Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe2 on GaAs",
B. Seredyński, Z. Ogorzałek, W. Zajkowska, R. Bożek, M. Tokarczyk, J. Suffczyński, S. Kret, J. Sadowski, M. Gryglas-Borysiewicz, W. Pacuski,
Cryst. Growth Des. 21, 5773 (2021).