(International Centre for Interfacing Magnetism and Superconductivity with Topological Matter - MagTop , Institute of Physics, Polish Academy of Sciences)
The recent discovery of unconventional superconductivity in a stacked, twisted pair of graphene sheets is a famous consequence of what is known as a flat energy band, in which the kinetic energy of the electrons becomes negligible and their mutual interactions dominate. Materials with flat energy bands give rise to enhanced correlation effects, exotic phases of matter, and unexpected properties. In this talk, I will present our recent results on flat bands in two and three dimensions.I will start with the celebrated example of magic-angle twisted bilayer graphene. This material exhibits flat low-energy bands with Van Hove singularities close to the Fermi level. In our study, we compute four-terminal conductance in mesoscopic, ballistic samples of small-angle twisted bilayer graphene with up to one million lattice sites. We establish a correspondence between features in the wide-junction conductance and the presence of Van Hove singularities in the density of states. Moreover, we identify additional transport features, such as a large, pressure-tunable minimal conductance and conductance peaks coinciding with non-singular band crossings. Our results suggest that twisted bilayer graphene close the magic angle is a unique system featuring simultaneously large conductance due to the quasi-flat bands, strong quantum nonlinearity due to the Van Hove singularities and high sensitivity to external parameters [1].In the second part of my talk, I will lift the study of electronic flat bands into the third dimension. I will show theoretically how to use strain engineering to generate flat three-dimensional energy bands in topological nodal-line semimetals, which are materials whose valence and conduction bands cross to form closed loops. I will unravel the underlying mechanism and present the competition of the arising superconducting and magnetic orders. The required strain profile can be realized, for instance, by bending the sample, which allows for in situ tuning of the emerging correlated phases and the transition temperatures. Finally, I will introduce rhombohedral graphite and CaAgP as promising material candidates to realize this proposal [2].[1] A. S. Ciepielewski, J. Tworzydło, T. Hyart, and A. Lau, Phys. Rev. Research 4, 043145 (2022)[2] A. Lau, T. Hyart, C. Autieri, A. Chen, and D. I. Pikulin, Phys. Rev. X 11, 031017 (2021),UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

dr hab. Michał Bejger, Prof CAMK PAN (Nicolaus Copernicus Center of the Polish Academy of Sciences)
Chemical elements are the fundamental building blocks of life, as well as necessary components of our technology and civilization.I will summarise the knowledge of the origin of the elements from an astronomer's perspective: from the early Universe big bang, life of stars to the fate of their remnants.UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

prof. dr hab. Piotr Perlin (Institute of High Pressure Physics “Unipress”, Polish Academy of Sciences, Warsaw, Poland TOP-Gan Corp. Warsaw, Poland)
III-N semiconductors (AlInGaN) are critical materials for modern optoelectronics. Light emitters based on these semiconductors (laser diodes and LEDs) can be adapted to operate at various wavelengths covering the visible and ultraviolet part of the spectrum. At the same time, group III nitrides are the first widely used semiconductors that combine a wide band gap and a non-cubic crystallographic structure. This situation forced the industry to face several new phenomena, such as the presence of a strong internal electric field in quantum structures, the problem of effective doping, and finally the presence of high dislocation density. As part of this presentation, I would like to show that with the increasing maturity of technology, some problems have been solved, some have turned out to be beneficial rather than problematic, but some remain unresolved. The emergence of efficient, visible light sources coincides with the demand for emerging quantum technologies. Using the example of optical atomic clocks, I will show the path of development of optical elements, such as laser diodes with adjustable wavelength of visible light and semiconductor optical amplifiers. Finally, I will discuss the challenges of building a nitride-based photonic integrated circuit.UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

dr Piotr Kapuściński (Laboratoire National des Champs Magnétiques Intenses, Grenoble, Francja)
Whereas Raman scattering spectroscopy has been widely applied to study the monolayers (ML) of transition metal dichalcogenides (TMD) no electronic excitations in these emerging 2D semiconductors have been observed with this technique. Here, we report the inelastic light scattering magneto-spectroscopy under quasi-resonant conditions on lightly doped WSe2 and MoSe2 monolayers and reveal a series of inter Landau level excitations. Data analysis allows us to determine the single particle effective masses in the systems studied. Those relevant band structure parameters are of primary importance for modeling the advanced ML-TMD properties, though they are barely estimated from other, more conventional measurements.
Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

dr Anna Kaleta (Institute of Physics Polish Academy of Sciences)
Thermal decomposition of (Ga,Mn)As, the canonical dilute ferromagnetic semiconductor, leads to the formation of ferromagnetic α-MnAs (of hexagonal crystal structure) nanocrystals (NCs) being incoherent with the surrounding zinc-blende GaAs crystalline matrix. On the other hand, wurtzite (WZ) (Ga,Mn)As, sharing similar symmetry with hexagonal α-MnAs, can be obtained if (Ga,Mn)As is grown as shells of WZ GaAs nanowire cores. We have shown that annealing of the WZ (Ga,Mn)As at 450 °C results in tensely strained MnAs NCs embedded semi-coherently in WZ-GaAs matrix and stabilizes ferromagnetic α-MnAs phase to above 127 °C (bulk α-MnAs TC = 40 °C) [1].I will present structural changes in WZ-(Ga,Mn)As NW shell at high spatial resolution occurring under annealing by employing in-situ scanning transmission electron microscopy (STEM). I will also show how to control the granular GaAs:MnAs system to achieve the desired size and distribution of MnAs NCs by designing the core-shell nanowire system and selecting the appropriate annealing conditions. In this context, I will present the role of the (Ga,Al)As shell and the importance of the anisotropy of the WZ GaAs crystal structure in the process of manganese diffusion and the movement of MnAs NCs in the nanowires.[1] A. Kaleta, S. Kret, K. Gas, B. Kurowska, S. Kryvyi, B. Rutkowski,N.G. Szwacki, M. Sawicki, J. Sadowski, Nano Lett. 19, 7324 (2019)UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

dr hab. Yaroslav Zhydachevskyy, prof. IF PAN (Institute of Physics Polish Academy of Sciences)
The possibility of tuning of luminescent properties including the band gap engineering by adjusting the chemical composition will be demonstrated for the Mn4+-doped Al2O3-Ga2O3 solid solutions and RAlO3 (R = Y, La, Gd, Yb, Lu) perovskites. In particular, spectroscopic features of the Mn4+ deep red emission in Al2O3-Ga2O3 alloys, including the temperature-dependent emission efficiency and decay time, as well as the possibility of their tuning through chemical and hydrostatic pressure will be shown. The possibility of band gap engineering in RAlO3:Mn4+ perovskites in the context of trap depths of intrinsic point defects and their effect on thermoluminescent properties of the material will be demonstrated using both experimental and theoretical approaches.UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

prof. dr hab. Robert Kudrawiec (Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology)
Abstract(pdf file)UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

prof. dr hab. Czesław Skierbiszewski (Institute of High Pressure Physics PAS, Unipress)
Abstract(pdf file)UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

dr Artur Slobodeniuk (Faculty of Mathematics and Physics, Charles University, Praga)
The Coulomb interaction in transition metal dichalcogenide monolayersresults in strongly bound excitons which dominate the optical responseof these materials. Despite a large number of studies, an understandingof how Coulomb and many-body correlation effects affect the excitonicresonances on a femtosecond time scale is still lacking. In order toclarify this question, we consider the excitonic shifts induced by theintense circularly-polarized non-resonant pump pulse applied normally tothe monolayer. We observe experimentally valley-selective (optical Starkand Bloch-Siegert) transient blue shifts of both 1s A and B excitontransitions. We use semiconductor Bloch equations for the theoreticaldescription of the shifts. The solutions of these equations are obtainedwith a modified perturbation technique, which takes into accountmany-body and Coulomb interaction effects. These solutions allow us toexplain the polarization dependence of the observed shifts and calculatetheir values analytically. UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

mgr Mateusz Król (Faculty of Physics, University of Warsaw)
In quantum mechanics, the assumed hermicity of the Hamiltonian ensures that the probability of finding a particle is constant over time. The description of dissipation or gain in a system typically requires introduction of non-Hermitian terms. The resulting non-Hermitian Hamiltonian can exhibit properties unavailable for typical Hermitian systems. The most striking example of such behavior is the existence of so-called Exceptional Points (EP), points in parameter space where both eigenvalues and eigenvectors coalesce (are degenerate).In this work, we introduce the basics of non-Hermitian physics with special emphasis on the properties of EPs. Specifically, we consider a planar optical microcavity filled with a birefringent liquid crystal. We show how polarization dependent losses in such a system lead to emergence of EPs. We demonstrate, both theoretically and experimentally, how owing to the sensibility of the liquid crystal to an external electric field, it is possible to change the position of the EPs. In particular, we show how EPs can be removed (annihilated) from the system when two of them are brought into a single position.M. Król, I. Septembre et al., Annihilation of exceptional points from different Dirac valleys in a 2D photonic system, Nat. Commun. 13, 5340 (2022).UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

dr Łukasz Kubiszyn (VIGO Photonics S.A.)
During the last 7 years, VIGO has been developing the technology of antimonide superlattices (SLs) grown on GaAs substrates, in particular InAs/InAsSb (the so-called Ga-free) SLs. The optimization of growth and processing resulted in MWIR and LWIR heterostructural devices whose detectivity is approaching the level of mercury-cadmium telluride (MCT) detectors offered in the VIGO catalogue. We are constantly developing new devices aiming at the replacement of MCT for some applications. During the seminar, the overall progress of the technology and device architecture will be presented. Greater focus will be put on recent results concerning interband cascade LWIR detectors whose aim is to reach high detectivity in conditions where the conventional IR photodiodes suffer from a very low quantum efficiency and extremely low resistances. The challenges of the technology and plans for future improvements will be also discussed.UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
instruction: (pdf file) Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

prof. dr hab. Andrzej Golnik (Faculty of Physics, University of Warsaw)
On 1 September 1947 dr. Leonard Sosnowski was hired as a deputy professor on the Chair of Electronics and Radiology of the University of Warsaw. This date is commonly treated as a foundation of the Solid State Physics Division at the University. I would like to remind you some facts from the beginnings of the Division as well as to sketch some trends of its development.UwagaSeminarium w trybie HybrydowymFaculty of Physics room 0.06link to remote mode:https://zoom.us/j/7218838148szczegóły patrz instrukcja :
instrukcja: (pdf file)AttentionThe seminar in the Hybrid modeFaculty of Physics room 0.06for details see instruction :
Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

dr hab. inż. Paweł Scharoch, university professor (Wroclaw University of Science and Technology Department of Semiconductor Materials Engineering)
As long as semiconductors are fundamental materials for high technologies, their engineering has become indispensable. Engineering means not only formation but also tuning the properties, which is a subject of extended worldwide research. The role of ‘ab initio’ computational methods based on Density Functional Theory (DFT) cannot be overvalued. They not only provide theoretical evidence which helps to interpret experimental results but also, due to their ‘ab initio’ character, the properties of materials can be predicted with high credibility. The examples of extended, systematic studies of the whole groups of materials will be presented, focusing on various ways of the properties modification, like alloying (within group IV materials), alternative crystal structures (group III-V in wurtzite structure), or strains (group IV). It will be also shown how the DFT may be used in device modelling, via providing a reference for adjusting the parameters of simpler methods, like kp. Chosen examples of DFT calculations referred to optical measurements done within the Department of Semiconductor Materials Engineering, at Wroclaw University of Science and Technology will be presented.