Magnetic tunnel junction (MTJ) – a simple trilayer structure, consisting of two thin ferromagnets separated by even thinned tunnel barrier, allowing for electrons to tunnel and preserve the spin orientation – is a fundamental building block of modern spintronic devices. It has been successfully applied in storage (hard disc drives, magnetic random access memories) and sensing (magnetic field sensors) applications [1]. Further optimization is anticipated, so that MTJs can be used beyond conventional magnetic components, such as high-frequency electronic components or building blocks of unconventional computing platforms. I the talk, I will introduce the modern MTJ structure, challenges and outlook for further optimization including material structure, control mechanism and scaling. I will mention recent activities related to the reduction of less-abundant material usage [2], and utilization of so-called spin-orbit torque (SOT), which enables fast (and therefore energy-efficient) writing [3].Then I will move on to the discussion of the magnetization dynamics in MTJ. Magnetization precession induced by radio-frequency voltage application enables determination of the influence on the electric field on the magnetic anisotropy also in a GHz frequency range [4]. Upon application of the DC current in the optimized structure one ca also obtain a stable magnetization precession, which can be further stabilized using the magnetic feedback loop [5].Finally, I will discuss the possibilities of MTJ utilization in novel unconventional computing platforms, which includes neural networks [6] and reservoir computing [7], which is envisioned to contribute to the development of dedicated artificial intelligence hardware with more energy-efficient computation.The author acknowledges grant Sheng no. 2021/40/Q/ST5/00209 from the National Science Centre, Poland and the Excellence initiative-research university (IDUB) programme of the AGH University of Krakow.References:[1] – B. Dieny et al. Nature Electron. 3, 446 (2020)[2] – M. Cierpiał et al. Scientific Reports 15, 35227 (2025)[3] – L. Liu et al Phys. Rev. Lett. 106, 036601 (2011)[4] – W. Skowroński et al. Appl. Phys. Lett. 115, 072401 (2019)[5] – W. Skowroński et al. Scientific Reports 9, 19091 (2019)[6] – P. Rzeszut et al. Scientific Reports 12, 7178 (2022)[7] – C. Heins et al. arxiv 2509.19483 (2025)
Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

prof. Filip Tuomisto (Department of Physics, University of Helsinki, Finland)
Direct experimental characterization of defects in semiconductors is a challenging task. Simultaneous determination of their identity (atomic structure), quantity (density, distribution), as well as electrical, optical, and mechanical characteristics is very rarely possible. Most experimental methods for defect characterization focus on one of the various aspects: atomic structure, electrical levels in the bandgap, or optical characteristics. Vacancy defects are particularly challenging as many of the structure-sensitive methods cannot detect empty space. Positrons provide a selective sensitive probe for vacancy-type defects in semiconductors [1, 2]. The trapping and annihilation process of positrons does not depend on the conductivity or the bandgap of the semiconductor. Hence, from the point of view of the experiment, there is no difference between narrow gap semiconductors, ultra-wide gap semiconductors, metals, and insulators. Optical properties do not affect the experiments either. The elemental sensitivity of the positron annihilation signals is very high for atoms directly neighboring the vacancy, and it it extends at a measurable level to the next-nearest-neighbors. This makes positron annihilation techniques particularly useful for analyzing vacancy-impurity interactions in elemental semiconductors, vacancy defects on various sublattices in compound semiconductors, and also the complex phenomena associated with vacancy defects in both elemental and compound semiconductor alloys. Extracting the highest level of detail requires careful design of experiments and performing state-of-the-art theoretical calculations of the expected positron-electron annihilation signals. In this talk, I will give a brief introduction to the experimental and computational methods employed in defect characterization with positron annihilation spectroscopy. This will be followed by recent examples in elemental and compound semiconductors and their alloys [3, 4].[1] F. Tuomisto and I. Makkonen, Rev. Mod. Phys. 85, 1583 (2013).[2] I. Makkonen and F. Tuomisto, J. Appl. Phys. 135, 040901 (2024).[3] I. Zhelezova et al., J. Appl. Phys. 136, 065702 (2024).[4] I. Prozheev et al., Nat. Comms. 16, 5005 (2025).
Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

prof. Carmine Autieri (International Centre for Interfacing Magnetism and Superconductivity with Topological Matter - MagTop, Institute of Physics, Polish Academy of Sciences)
Spin-momentum locking has been demonstrated to exist in altermagnets in the non-relativistic limit [1]. When spin-orbit coupling is taken into account, all altermagnets display antisymmetric exchange interactions. These interactions lead to spin canting, although the canting may vanish for certain orientations of the N´eel vector. We demonstrate that when spin-canting occurs, the spin-momentum locking can evolve and change significantly. Focusing on the centrosymmetric altermagnets, we will show that the spin-momentum locking can be present and differs for all three components of the spin Sx, Sy and Sz. The combination of the three spin-momentum lockings is named relativistic spin-momentum locking. To discuss this effect, we consider two prototypical centrosymmetric altermagnets, namely the orthorhombic YVO3 and the hexagonal MnTe, which have bulk d-wave and bulk g-wave spin-momentum locking in the non-relativistic limit. For the G-type magnetic ordering of YVO3 and N´eel vector along the z-axis, the relativistic spin-momentum locking is composed of s-wave, dxy-wave and dxz-wave for the Sx, Sy and Sz components, respectively. As in the non-relativistic case, the relativistic spin-momentum locking is protected by rotational symmetries. In MnTe, the main component Sy of MnTe inherits the polarized charge distribution and the non-relativistic spin-momentum locking bulk g-wave, but the breaking of the C6z rotational symmetry by the N´eel vector lowers the symmetry from g-wave to d-wave. The relativistic spin-momentum locking for MnTe is composed of dxz -wave, dyz -wave and s-wave for the Sx, Sy and Sz components, respectively [2,3]. There are several orders of magnitude of difference between the size of the main spin component and the components raised by the canting. Despite this, the spectral weight of the canted components on the spin-resolved band structure is significant. Indeed, the spectral weight of the canted components is smaller but of the same order of magnitude as that of the main spin component. Finally, we address the challenges arising in noncentrosymmetric altermagnets [4]. [1] L. Smejkal, J. Sinova, and T. Jungwirth, Phys. Rev. X 12, 031042 (2022). [2] C. Autieri and A. Fakhredine. Submitted. [3] R. Hirakida et al. https://arxiv.org/abs/2509.20120 [4] A. Fakhredine, C. Autieri et al. In manuscript.
Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

prof. dr hab Detlef Hommel (PORT, Polish Center for Technology Development, Wrocław)
Despite of the big progress obtained with group-III nitrides (AlGaInN) in last 3 decades (blue LED’s and LD’s,,solid state lighting and electronic devices) further applications are still hampered by internal material limitations like insufficient p-dopability of high-Al containing compounds needed for deep-UV emitters. In this respect many efforts are made to extend the functionalities of the nitrides by alloying them with other elements like B, P, Sb, Mn or As. This seminar will give an overview on our efforts to introduce arsenic into Ga(Al)N as well by MBE and MOVPE as growth methods. Using MOVPE homogeneous As concentrations up to 7.6% could be obtained whereas the As incorporation in MBE growth was limited to 1%. The influence of the As-content the Ga(Al)N matrix on the band structure will be discussed as well as potential applications for electronic and light emitting devices. On the other hand when changing the MBE growth conditions from nitrogen-rich to gallium-rich a self-initiated VLS-growth (vapor-liquid-solid) of regular GaN-columns with dodecagonal walls is observed. Usually all nitride-based columns are hexagonal in their shape. This is the first finding of such dodecagonal rods with stable a- and m-plane walls. The underlying physical mechanisms and the stability of the a- and m-planes will be explained in detail. Applications of such microcolumns for water splitting and UV-emitters will be presented. Research Group Lider EpiMat (Advanced Epitaxial Materials)Director of the Material Science and Engineering Center at PORT
Zapraszamy do sali 0.06, ul. Pasteura 5 o godzinie 10:15

mgr Małgorzata Jakubowska, mgr Aliaksei Bohdan, dr hab. Agnieszka Wołoś, dr Robert Dwiliński, prof. dr hab. Jacek Baranowski, (Wydział Fizyki Uniwersytetu Warszawskiego)
During the seminar, selected research topics pursued by Prof. Maria Kamińska throughout her career at the Faculty of Physics will be presented. The topics will include transition metals anddeep centers in semiconductors, the technology and properties of ammonothermally grown gallium nitride, as well as recent research on perovskite crystallization, heterostructures for photocatalysis, and electrocatalysts for use in electrolysers, developed using atomic layerdeposition (ALD) technology.